SFU9210 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SFU9210 datasheet

..1. Size:256K fairchild semi
sfr9210 sfu9210.pdf pdf_icon

SFR/U9210 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.6 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = -200V Lower RDS(ON) 2.084 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu

8.1. Size:309K fairchild semi
sfu9214 sfr9214.pdf pdf_icon

SFR/U9214 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.53 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A(Max.) @ VDS = -250V Lower RDS(ON) 3.15 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Abs

9.1. Size:257K fairchild semi
sfr9220 sfu9220.pdf pdf_icon

SFR/U9220 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.1 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = -200V Lower RDS(ON) 1.111 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum

9.2. Size:269K fairchild semi
sfu9224 sfr9224.pdf pdf_icon

SFR/U9224 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.5 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = -250V Lower RDS(ON) 1.65 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum

Otros transistores... SFS9Z34 , SFU2955 , SFU9014 , SFU9024 , SFU9034 , SFU9110 , SFU9120 , SFU9130 , AO3400 , SFU9214 , SFU9220 , SFU9224 , SFU9310 , SFW2955 , SFW9510 , SFW9520 , SFW9530 .