BUK445-600B Todos los transistores

 4.1. Size:230K  inchange semiconductor
 buk445-600ab.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK445-600A/B DESCRIPTION Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE

 5.1. Size:347K  philips
 buk445-60a-b.pdf

 5.2. Size:109K  philips
 buk445-60h.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK445-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 22.5 A Automotive applications, Switched Ptot Total power dissipatio

 5.3. Size:230K  inchange semiconductor
 buk445-60.pdf

isc N-Channel MOSFET Transistor BUK445-60A/B DESCRIPTION Drain Source Voltage- V =60V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(T =25 )