BUK445-600B - параметры транзистора MOSFET, его аналоги, datasheet

BUK445-600B Datasheet (PDF)

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INCHANGE Semiconductorisc N-Channel MOSFET Transistor BUK445-600A/BDESCRIPTIONDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE

5.1. Size:347K philips
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5.2. Size:109K philips
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Philips Semiconductors Product specification PowerMOS transistor BUK445-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 22.5 AAutomotive applications, Switched Ptot Total power dissipatio

5.3. Size:230K inchange semiconductor
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isc N-Channel MOSFET Transistor BUK445-60A/BDESCRIPTIONDrain Source Voltage-: V =60V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE MAXIMUM RATINGS(T =25)

Другие MOSFET... BUK438-500B , BUK444-600A , BUK444-600B , BUK445-100A , BUK445-100B , BUK445-400A , BUK445-400B , BUK445-600A , STF13NM60N , FMV09N70E , FRK250 , FRM230 , FRM240 , IPP015N04N , IPP023NE7N3 , IPP024N06N3 , IPP030N10N3 .