BUK445-600B - аналоги, параметры транзистора - Справочник транзисторов

BUK445-600B даташит

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUK445-600A/B DESCRIPTION Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE

5.1. Size:347K philips
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5.2. Size:109K philips
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Philips Semiconductors Product specification PowerMOS transistor BUK445-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 22.5 A Automotive applications, Switched Ptot Total power dissipatio

5.3. Size:230K inchange semiconductor
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isc N-Channel MOSFET Transistor BUK445-60A/B DESCRIPTION Drain Source Voltage- V =60V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(T =25 )

Другие MOSFET... BUK438-500B , BUK444-600A , BUK444-600B , BUK445-100A , BUK445-100B , BUK445-400A , BUK445-400B , BUK445-600A , IRFP250 , FMV09N70E , FRK250 , FRM230 , FRM240 , IPP015N04N , IPP023NE7N3 , IPP024N06N3 , IPP030N10N3 .