IPP35CN10N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPP35CN10N Datasheet (PDF)

..1. Size:854K infineon
ipb34cn10ng ipd33cn10ng ipi35cn10ng ipp35cn10ng ipb34cn10n ipd33cn10n ipi35cn10n ipp35cn10n.pdf pdf_icon

IPB34CN10N G IPD33CN10N GIPI35CN10N G IPP35CN10N GOptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 33 mW Excellent gate charge x R product (FOM)DS(on)ID 27 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) f

..2. Size:246K inchange semiconductor
ipp35cn10n.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP35CN10NIIPP35CN10NFEATURESStatic drain-source on-resistance:RDS(on) 0.035Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MA

0.1. Size:704K infineon
ipb35cn10n-g ipd33cn10n-g ipi35cn10n-g ipp35cn10n-g ipu33cn10n-g.pdf pdf_icon

IPB35CN10N G IPD33CN10N GIPI35CN10N G IPP35CN10N G IPU33CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 34mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 27 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

Otros transistores... IPP065N03L , IPP072N10N3 , IPP084N06L3 , IPP086N10N3 , IPP126N10N3 , IPP12CN10N , IPP180N10N3 , IPP26CN10N , IRF1405 , IPP80CN10N , IPW60R060C7 , IPW60R070CFD7 , IPW60R080P7 , IPW60R099P7 , IPW60R120C7 , IPW60R170CFD7 , IRF200P223 .