IRF200P223 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRF200P223 datasheet

..1. Size:1063K infineon
irf200p223.pdf pdf_icon

IRF200P223 IR MOSFET - StrongIRFET V 200V D DSS R DS(on) typ. 9.5m G Applications max 11.5m S UPS and Inverter applications I 100A D Half-bridge and full-bridge topologies Resonant mode power supplies D DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications S Battery power

..2. Size:242K inchange semiconductor
irf200p223.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF200P223 IIRF200P223 FEATURES Static drain-source on-resistance RDS(on) 11.5m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=270 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION OR-ring and redundant power switches ABSOLUTE MAXIMUM

8.1. Size:542K international rectifier
irf200b211.pdf pdf_icon

StrongIRFET IRF200B211 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 200V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 135m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 170m Resonant mode power supplies S DC/DC and AC/

8.2. Size:1076K infineon
irf200s234.pdf pdf_icon

IRF200S234 IR MOSFET - StrongIRFET V 200V D DSS R DS(on) typ. 14m Applications G max 16.9m Brushed Motor drive applications S I 90A D BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies D Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power sw