IRF200P223 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF200P223
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 313 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 66 nS
   Cossⓘ - Capacitancia de salida: 628 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm
   Paquete / Cubierta: TO247AC

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IRF200P223 Datasheet (PDF)

..1. Size:1063K infineon
irf200p223.pdf

IRF200P223 IR MOSFET - StrongIRFET V 200V D DSS RDS(on) typ. 9.5m GApplications max 11.5m S UPS and Inverter applications I 100A D Half-bridge and full-bridge topologies Resonant mode power supplies D DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications S Battery power

..2. Size:242K inchange semiconductor
irf200p223.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF200P223IIRF200P223FEATURESStatic drain-source on-resistance:RDS(on)11.5mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=270A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOR-ring and redundant power switchesABSOLUTE MAXIMUM

8.1. Size:542K international rectifier
irf200b211.pdf

StrongIRFET IRF200B211 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 200V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 135m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 170m Resonant mode power supplies S DC/DC and AC/

8.2. Size:1076K infineon
irf200s234.pdf

IRF200S234 IR MOSFET - StrongIRFET V 200V D DSS RDS(on) typ. 14m Applications Gmax 16.9m Brushed Motor drive applications SI 90A D BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies D Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power sw

8.3. Size:245K inchange semiconductor
irf200b211.pdf

isc N-Channel MOSFET Transistor IRF200B211IIRF200B211FEATURESStatic drain-source on-resistance:RDS(on) 170mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsResonant mode power suppliesDC/DC and AC/DC converters

8.4. Size:258K inchange semiconductor
irf200s234.pdf

isc N-Channel MOSFET Transistor IRF200S234FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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