IRF200P223 - Даташиты. Аналоги. Основные параметры

IRF200P223 IR MOSFET - StrongIRFET V 200V D DSS RDS(on) typ. 9.5m GApplications max 11.5m S UPS and Inverter applications I 100A D Half-bridge and full-bridge topologies Resonant mode power supplies D DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications S Battery power

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF200P223IIRF200P223FEATURESStatic drain-source on-resistance:RDS(on)11.5mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=270A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOR-ring and redundant power switchesABSOLUTE MAXIMUM

StrongIRFET IRF200B211 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 200V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 135m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 170m Resonant mode power supplies S DC/DC and AC/

IRF200S234 IR MOSFET - StrongIRFET V 200V D DSS RDS(on) typ. 14m Applications Gmax 16.9m Brushed Motor drive applications SI 90A D BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies D Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power sw

isc N-Channel MOSFET Transistor IRF200B211IIRF200B211FEATURESStatic drain-source on-resistance:RDS(on) 170mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsResonant mode power suppliesDC/DC and AC/DC converters

isc N-Channel MOSFET Transistor IRF200S234FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a