IRL40B212 Todos los transistores

 

IRL40B212 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRL40B212
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 231 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 195 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 154 nS
   Cossⓘ - Capacitancia de salida: 1050 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0019 Ohm
   Paquete / Cubierta: TO220AB
 

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IRL40B212 Datasheet (PDF)

 ..1. Size:618K  international rectifier
 irl40b212 irl40s212.pdf pdf_icon

IRL40B212

StrongIRFET IRL40B212 IRL40S212 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications DBattery powered circuits RDS(on) typ. 1.5m Half-bridge and full-bridge topologies max 1.9m Synchronous rectifier applications GID (Silicon Limited) 254A Resonant mode powe

 ..2. Size:245K  inchange semiconductor
 irl40b212.pdf pdf_icon

IRL40B212

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL40B212IIRL40B212FEATURESStatic drain-source on-resistance:RDS(on) 1.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

 6.1. Size:542K  international rectifier
 irl40b215.pdf pdf_icon

IRL40B212

StrongIRFET IRL40B215 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.2mBattery powered circuits max 2.7m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 164A Resonant mode power suppli

 6.2. Size:246K  inchange semiconductor
 irl40b215.pdf pdf_icon

IRL40B212

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL40B215IIRL40B215FEATURESStatic drain-source on-resistance:RDS(on) 2.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

MOSTRAR MÁS

Otros transistores... IRF200P223 , IRF250P225 , IRF60B217 , IRF630NSTRRPBF , IRFP4127 , IRFP4868 , IRFP7537 , IRFP7718 , IRF3205 , IRL40B215 , IRL60B216 , IRL8114 , TK10A50W , TK10A60D5 , TK10A80W , TK10E80W , TK12A50D5 .

History: KMB7D0N40QA | RU40120L | SIS472ADN | WPM3407 | SSB65R190S2 | SSF60R190S2E | STB25NM50N-1

 

 
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