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TK10A50W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK10A50W

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 20 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: TO-220F

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TK10A50W datasheet

 ..1. Size:251K  toshiba
 tk10a50w.pdf pdf_icon

TK10A50W

TK10A50W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10A50W TK10A50W TK10A50W TK10A50W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.327 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 ..2. Size:253K  inchange semiconductor
 tk10a50w.pdf pdf_icon

TK10A50W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10A50W ITK10A50W FEATURES Low drain-source on-resistance RDS(ON) = 0.38 Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.5 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators

 7.1. Size:197K  toshiba
 tk10a50d.pdf pdf_icon

TK10A50W

TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK10A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.62 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 7.2. Size:252K  inchange semiconductor
 tk10a50d.pdf pdf_icon

TK10A50W

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A50D ITK10A50D FEATURES Low drain-source on-resistance RDS(ON) = 0.62 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS

MOSTRAR MÁS

Otros transistores... IRFP4127 , IRFP4868 , IRFP7537 , IRFP7718 , IRL40B212 , IRL40B215 , IRL60B216 , IRL8114 , IRF540N , TK10A60D5 , TK10A80W , TK10E80W , TK12A50D5 , TK12A50W , TK12A80W , TK17A65W , TK17A65W5 .

History: LO4459PT1G | FDC8878 | LSD60R099HT | LF2802A | FTA07N60 | IRLL2705PBF

 

 

 

 

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