Справочник MOSFET. TK10A50W

 

TK10A50W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK10A50W
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.7 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 20 nC
   trⓘ - Время нарастания: 22 ns
   Cossⓘ - Выходная емкость: 20 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для TK10A50W

 

 

TK10A50W Datasheet (PDF)

 ..1. Size:251K  toshiba
 tk10a50w.pdf

TK10A50W TK10A50W

TK10A50WMOSFETs Silicon N-Channel MOS (DTMOS)TK10A50WTK10A50WTK10A50WTK10A50W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 ..2. Size:253K  inchange semiconductor
 tk10a50w.pdf

TK10A50W TK10A50W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK10A50WITK10A50WFEATURESLow drain-source on-resistance: RDS(ON) = 0.38Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.5 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

 7.1. Size:197K  toshiba
 tk10a50d.pdf

TK10A50W TK10A50W

TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK10A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.) High forward transfer admittance: Yfs = 5.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 7.2. Size:252K  inchange semiconductor
 tk10a50d.pdf

TK10A50W TK10A50W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A50DITK10A50DFEATURESLow drain-source on-resistance:RDS(ON) = 0.62 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

 8.1. Size:189K  toshiba
 tk10a55d.pdf

TK10A50W TK10A50W

TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK10A55D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.56 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth

 8.2. Size:252K  inchange semiconductor
 tk10a55d.pdf

TK10A50W TK10A50W

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A55DITK10A55DFEATURESLow drain-source on-resistance:RDS(ON) = 0.56 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

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