TK10A50W - аналоги, параметры транзистора - Справочник транзисторов

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TK10A50W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10A50W TK10A50W TK10A50W TK10A50W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.327 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10A50W ITK10A50W FEATURES Low drain-source on-resistance RDS(ON) = 0.38 Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.5 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators

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TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK10A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.62 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

7.2. Size:252K inchange semiconductor
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INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A50D ITK10A50D FEATURES Low drain-source on-resistance RDS(ON) = 0.62 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS