TK10A50W MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK10A50W
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 30 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 3.7 V
Максимально допустимый постоянный ток стока |Id|: 9.7 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 20 nC
Время нарастания (tr): 22 ns
Выходная емкость (Cd): 20 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.38 Ohm
Тип корпуса: TO-220F
TK10A50W Datasheet (PDF)
tk10a50w.pdf
TK10A50WMOSFETs Silicon N-Channel MOS (DTMOS)TK10A50WTK10A50WTK10A50WTK10A50W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk10a50w.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK10A50WITK10A50WFEATURESLow drain-source on-resistance: RDS(ON) = 0.38Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.5 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators
tk10a50d.pdf
TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK10A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.) High forward transfer admittance: Yfs = 5.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
tk10a50d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A50DITK10A50DFEATURESLow drain-source on-resistance:RDS(ON) = 0.62 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
tk10a55d.pdf
TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK10A55D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.56 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth
tk10a55d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A55DITK10A55DFEATURESLow drain-source on-resistance:RDS(ON) = 0.56 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
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