TK12A80W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK12A80W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 11.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 40 nS
Cossⓘ - Capacitancia de salida: 29 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de TK12A80W MOSFET
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TK12A80W datasheet
..1. Size:405K toshiba
tk12a80w.pdf 
TK12A80W MOSFETs Silicon N-Channel MOS (DTMOS ) TK12A80W TK12A80W TK12A80W TK12A80W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.38 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhan
..2. Size:253K inchange semiconductor
tk12a80w.pdf
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK12A80W ITK12A80W FEATURES Low drain-source on-resistance RDS(ON) = 0.38 (typ.) Enhancement mode Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.57mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(
9.1. Size:241K toshiba
tk12a60w.pdf
TK12A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK12A60W TK12A60W TK12A60W TK12A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.265 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E
9.2. Size:201K toshiba
tk12a45d.pdf
TK12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK12A45D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.43 (typ.) High forward transfer admittance Yfs = 5.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 450 V) Enhancement-mode
9.3. Size:180K toshiba
tk12a53d.pdf
TK12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK12A53D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.5 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 525 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
9.4. Size:238K toshiba
tk12a50w.pdf
TK12A50W MOSFETs Silicon N-Channel MOS (DTMOS ) TK12A50W TK12A50W TK12A50W TK12A50W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.265 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E
9.5. Size:263K toshiba
tk12a65d.pdf
TK12A65D MOSFETs Silicon N-Channel MOS ( -MOS ) TK12A65D TK12A65D TK12A65D TK12A65D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.46 (typ.) (2) High forward transfer admittance Yfs = 6.0 S (typ.) (3) Low leakage current ID
9.6. Size:179K toshiba
tk12a60u.pdf
TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK12A60U Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.36 (typ.) High forward transfer admittance Yfs = 7.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA
9.7. Size:185K toshiba
tk12a60d.pdf
TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK12A60D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance RDS (ON) = 0.45 (typ.) High forward transfer admittance Yfs = 7.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mod
9.8. Size:276K toshiba
tk12a50d5.pdf
TK12A50D5 MOSFETs Silicon N-Channel MOS ( -MOS ) TK12A50D5 TK12A50D5 TK12A50D5 TK12A50D5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trrf = 50 ns (typ.), trr = 120 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.5 (typ.) (3) High
9.9. Size:187K toshiba
tk12a55d.pdf
TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK12A55D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.48 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vt
9.10. Size:254K toshiba
tk12a50d.pdf
TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK12A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.45 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs
9.11. Size:253K inchange semiconductor
tk12a60w.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK12A60W,ITK12A60W FEATURES Low drain-source on-resistance RDS(ON) = 0.265 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.6 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regu
9.12. Size:252K inchange semiconductor
tk12a45d.pdf
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK12A45D ITK12A45D FEATURES Low drain-source on-resistance RDS(ON) = 0.43 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS
9.13. Size:252K inchange semiconductor
tk12a53d.pdf
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK12A53D ITK12A53D FEATURES Low drain-source on-resistance RDS(ON) = 0.5 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(
9.15. Size:252K inchange semiconductor
tk12a60u.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK12A60U,ITK12A60U FEATURES Low drain-source on-resistance RDS(ON) = 0.4 Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=1 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching
9.16. Size:255K inchange semiconductor
tk12a60d.pdf
isc N-Channel MOSFET Transistor TK12A60D FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
9.17. Size:253K inchange semiconductor
tk12a50d5.pdf
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK12A50D5 ITK12A50D5 FEATURES Low drain-source on-resistance RDS(ON) = 0.5 (typ.) Enhancement mode Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING
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