TK12A80W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK12A80W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 23 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 29 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET TK12A80W

TK12A80W Datasheet (PDF)

..1. Size:405K toshiba
tk12a80w.pdf

TK12A80WMOSFETs Silicon N-Channel MOS (DTMOS)TK12A80WTK12A80WTK12A80WTK12A80W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.38 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhan

..2. Size:253K inchange semiconductor
tk12a80w.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK12A80WITK12A80WFEATURESLow drain-source on-resistance: RDS(ON) = 0.38 (typ.)Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.57mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

9.1. Size:241K toshiba
tk12a60w.pdf

TK12A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK12A60WTK12A60WTK12A60WTK12A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

9.2. Size:201K toshiba
tk12a45d.pdf

TK12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK12A45D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.43 (typ.) High forward transfer admittance: Yfs = 5.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V) Enhancement-mode:

9.3. Size:180K toshiba
tk12a53d.pdf

TK12A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK12A53D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.5 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

9.4. Size:238K toshiba
tk12a50w.pdf

TK12A50WMOSFETs Silicon N-Channel MOS (DTMOS)TK12A50WTK12A50WTK12A50WTK12A50W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

9.5. Size:263K toshiba
tk12a65d.pdf

TK12A65DMOSFETs Silicon N-Channel MOS (-MOS)TK12A65DTK12A65DTK12A65DTK12A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.46 (typ.)(2) High forward transfer admittance: |Yfs| = 6.0 S (typ.)(3) Low leakage current: ID

9.6. Size:179K toshiba
tk12a60u.pdf

TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK12A60U Switching Regulator Applications Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 (typ.) High forward transfer admittance : Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA

9.7. Size:185K toshiba
tk12a60d.pdf

TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK12A60D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: Yfs = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mod

9.8. Size:276K toshiba
tk12a50d5.pdf

TK12A50D5MOSFETs Silicon N-Channel MOS (-MOS)TK12A50D5TK12A50D5TK12A50D5TK12A50D51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 120 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.5 (typ.)(3) High

9.9. Size:187K toshiba
tk12a55d.pdf

TK12A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK12A55D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vt

9.10. Size:254K toshiba
tk12a50d.pdf

TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK12A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs

9.11. Size:253K inchange semiconductor
tk12a60w.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK12A60W,ITK12A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.265 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.6 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regu

9.12. Size:252K inchange semiconductor
tk12a45d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK12A45DITK12A45DFEATURESLow drain-source on-resistance:RDS(ON) = 0.43 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

9.13. Size:252K inchange semiconductor
tk12a53d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK12A53DITK12A53DFEATURESLow drain-source on-resistance:RDS(ON) = 0.5 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

9.14. Size:253K inchange semiconductor
tk12a50w.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK12A50W,ITK12A50WFEATURESLow drain-source on-resistance: RDS(ON) = 0.3Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.6 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

9.15. Size:252K inchange semiconductor
tk12a60u.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK12A60U,ITK12A60UFEATURESLow drain-source on-resistance: RDS(ON) = 0.4Low leakage current: IDSS = 100A (max) (VDS = 600 V)Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching

9.16. Size:255K inchange semiconductor
tk12a60d.pdf

isc N-Channel MOSFET Transistor TK12A60DFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

9.17. Size:253K inchange semiconductor
tk12a50d5.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK12A50D5ITK12A50D5FEATURESLow drain-source on-resistance:RDS(ON) = 0.5 (typ.)Enhancement mode:Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

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