TK290A60Y Todos los transistores

 ..1. Size:448K  toshiba
 tk290a60y.pdf

TK290A60Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK290A60Y TK290A60Y TK290A60Y TK290A60Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.23 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 ..2. Size:253K  inchange semiconductor
 tk290a60y.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK290A60Y,ITK290A60Y FEATURES Low drain-source on-resistance RDS(ON) = 0.29 (typ.) Easy to control Gate switching Enhancement mode Vth = 3 to 4V (VDS = 10 V, ID=0.45mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulato

 7.1. Size:448K  toshiba
 tk290a65y.pdf

TK290A65Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK290A65Y TK290A65Y TK290A65Y TK290A65Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.23 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 7.2. Size:252K  inchange semiconductor
 tk290a65y.pdf

 9.1. Size:451K  toshiba
 tk290p65y.pdf

TK290P65Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK290P65Y TK290P65Y TK290P65Y TK290P65Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.23 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 9.2. Size:451K  toshiba
 tk290p60y.pdf

TK290P60Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK290P60Y TK290P60Y TK290P60Y TK290P60Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.23 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 9.3. Size:97K  jiangsu
 tk2907attd03.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors C TK2907ATTD03 TRANSISTOR WBFBP-03A (1.6 1.6 0.5) TOP unit mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor B E FEATURES 1. BASE C Complementary NPN Type available (TK2222ATTD03) 2. EMITTER 3. COLLECTOR BACK PPLICATION general purpose amplifier, swit

 9.4. Size:1156K  jiejie micro
 jmtk290n06a.pdf

60V, 30A, 28m N-channel Power Trench MOSFET JMTK290N06A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V 100% Vds TESTED VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 30 A RDS(ON)_Typ(@VGS=10V 25 mW Pb-free plating RDS(ON)_Typ(@VGS=4.5V 28 mW Applications Load Switch PWM

 9.5. Size:208K  inchange semiconductor
 tk290p60y.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK290P60Y FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U