TK290A60Y MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK290A60Y
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 35 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 11.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 25 nC
Tiempo de subida (tr): 25 nS
Conductancia de drenaje-sustrato (Cd): 26 pF
Resistencia entre drenaje y fuente RDS(on): 0.29 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET TK290A60Y
TK290A60Y Datasheet (PDF)
tk290a60y.pdf
TK290A60YMOSFETs Silicon N-Channel MOS (DTMOS)TK290A60YTK290A60YTK290A60YTK290A60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk290a60y.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK290A60Y,ITK290A60YFEATURESLow drain-source on-resistance: RDS(ON) = 0.29 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulato
tk290a65y.pdf
TK290A65YMOSFETs Silicon N-Channel MOS (DTMOS)TK290A65YTK290A65YTK290A65YTK290A65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk290a65y.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK290A65YITK290A65YFEATURESLow drain-source on-resistance: RDS(ON) = 0.29Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25
tk290p65y.pdf
TK290P65YMOSFETs Silicon N-Channel MOS (DTMOS)TK290P65YTK290P65YTK290P65YTK290P65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk290p60y.pdf
TK290P60YMOSFETs Silicon N-Channel MOS (DTMOS)TK290P60YTK290P60YTK290P60YTK290P60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk2907attd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors C TK2907ATTD03 TRANSISTOR WBFBP-03A (1.61.60.5) TOP unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor B E FEATURES 1. BASE C Complementary NPN Type available (TK2222ATTD03) 2. EMITTER 3. COLLECTOR BACK PPLICATION general purpose amplifier, swit
tk290p60y.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK290P60YFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
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