TK290A60Y
MOSFET. Datasheet pdf. Equivalent
Type Designator: TK290A60Y
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 11.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 25
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 26
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29
Ohm
Package:
TO-220F
TK290A60Y
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK290A60Y
Datasheet (PDF)
..1. Size:448K toshiba
tk290a60y.pdf 
TK290A60YMOSFETs Silicon N-Channel MOS (DTMOS)TK290A60YTK290A60YTK290A60YTK290A60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
..2. Size:253K inchange semiconductor
tk290a60y.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK290A60Y,ITK290A60YFEATURESLow drain-source on-resistance: RDS(ON) = 0.29 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulato
7.1. Size:448K toshiba
tk290a65y.pdf
TK290A65YMOSFETs Silicon N-Channel MOS (DTMOS)TK290A65YTK290A65YTK290A65YTK290A65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
7.2. Size:252K inchange semiconductor
tk290a65y.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK290A65YITK290A65YFEATURESLow drain-source on-resistance: RDS(ON) = 0.29Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25
9.1. Size:451K toshiba
tk290p65y.pdf
TK290P65YMOSFETs Silicon N-Channel MOS (DTMOS)TK290P65YTK290P65YTK290P65YTK290P65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
9.2. Size:451K toshiba
tk290p60y.pdf
TK290P60YMOSFETs Silicon N-Channel MOS (DTMOS)TK290P60YTK290P60YTK290P60YTK290P60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
9.3. Size:97K jiangsu
tk2907attd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors C TK2907ATTD03 TRANSISTOR WBFBP-03A (1.61.60.5) TOP unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor B E FEATURES 1. BASE C Complementary NPN Type available (TK2222ATTD03) 2. EMITTER 3. COLLECTOR BACK PPLICATION general purpose amplifier, swit
9.4. Size:208K inchange semiconductor
tk290p60y.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK290P60YFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
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