All MOSFET. TK290A60Y Datasheet

 

TK290A60Y Datasheet and Replacement


   Type Designator: TK290A60Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO-220F
 

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TK290A60Y Datasheet (PDF)

 ..1. Size:448K  toshiba
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TK290A60Y

TK290A60YMOSFETs Silicon N-Channel MOS (DTMOS)TK290A60YTK290A60YTK290A60YTK290A60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 ..2. Size:253K  inchange semiconductor
 tk290a60y.pdf pdf_icon

TK290A60Y

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK290A60Y,ITK290A60YFEATURESLow drain-source on-resistance: RDS(ON) = 0.29 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulato

 7.1. Size:448K  toshiba
 tk290a65y.pdf pdf_icon

TK290A60Y

TK290A65YMOSFETs Silicon N-Channel MOS (DTMOS)TK290A65YTK290A65YTK290A65YTK290A65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.23 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 7.2. Size:252K  inchange semiconductor
 tk290a65y.pdf pdf_icon

TK290A60Y

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK290A65YITK290A65YFEATURESLow drain-source on-resistance: RDS(ON) = 0.29Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

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Datasheet: TK12A50D5 , TK12A50W , TK12A80W , TK17A65W , TK17A65W5 , TK17E80W , TK19A50W , TK22A65X5 , AON6414A , TK290A65Y , TK380A60Y , TK380A65Y , TK3A90E , TK3R1A04PL , TK3R3A06PL , TK3R3E03GL , TK4A80E .

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