TK3R3A06PL Todos los transistores

 

TK3R3A06PL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK3R3A06PL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 950 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm

Encapsulados: TO-220F

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TK3R3A06PL datasheet

 ..1. Size:492K  toshiba
 tk3r3a06pl.pdf pdf_icon

TK3R3A06PL

TK3R3A06PL MOSFETs Silicon N-channel MOS (U-MOS -H) TK3R3A06PL TK3R3A06PL TK3R3A06PL TK3R3A06PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 21 nC (typ.) (3) Small out

 ..2. Size:253K  inchange semiconductor
 tk3r3a06pl.pdf pdf_icon

TK3R3A06PL

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK3R3A06PL ITK3R3A06PL FEATURES Low drain-source on-resistance RDS(ON) = 2.5m (typ.) (VGS = 10 V) Enhancement mode Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.7mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOL

 9.1. Size:408K  toshiba
 tk3r3e03gl.pdf pdf_icon

TK3R3A06PL

TK3R3E03GL MOSFETs Silicon N-Channel MOS (U-MOS -H) TK3R3E03GL TK3R3E03GL TK3R3E03GL TK3R3E03GL 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.6 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 30 V) (3)

 9.2. Size:245K  inchange semiconductor
 tk3r3e03gl.pdf pdf_icon

TK3R3A06PL

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK3R3E03GL ITK3R3E03GL FEATURES Low drain-source on-resistance RDS(on) 3.3m . Enhancement mode Vth =1.3 to 2.3V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(

MOSTRAR MÁS

Otros transistores... TK19A50W , TK22A65X5 , TK290A60Y , TK290A65Y , TK380A60Y , TK380A65Y , TK3A90E , TK3R1A04PL , P55NF06 , TK3R3E03GL , TK4A80E , TK4R3A06PL , TK4R3E06PL , TK560A60Y , TK560A65Y , TK5A90E , TK5R1E06PL .

 

 

 


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