All MOSFET. TK3R3A06PL Datasheet

 

TK3R3A06PL MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK3R3A06PL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 71 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO-220F

 TK3R3A06PL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK3R3A06PL Datasheet (PDF)

 ..1. Size:492K  toshiba
 tk3r3a06pl.pdf

TK3R3A06PL TK3R3A06PL

TK3R3A06PLMOSFETs Silicon N-channel MOS (U-MOS-H)TK3R3A06PLTK3R3A06PLTK3R3A06PLTK3R3A06PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 21 nC (typ.)(3) Small out

 ..2. Size:253K  inchange semiconductor
 tk3r3a06pl.pdf

TK3R3A06PL TK3R3A06PL

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK3R3A06PLITK3R3A06PLFEATURESLow drain-source on-resistance:RDS(ON) = 2.5m (typ.) (VGS = 10 V)Enhancement mode:Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.7mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOL

 9.1. Size:408K  toshiba
 tk3r3e03gl.pdf

TK3R3A06PL TK3R3A06PL

TK3R3E03GLMOSFETs Silicon N-Channel MOS (U-MOS-H)TK3R3E03GLTK3R3E03GLTK3R3E03GLTK3R3E03GL1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 30 V)(3)

 9.2. Size:245K  inchange semiconductor
 tk3r3e03gl.pdf

TK3R3A06PL TK3R3A06PL

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK3R3E03GLITK3R3E03GLFEATURESLow drain-source on-resistance:RDS(on) 3.3m.Enhancement mode:Vth =1.3 to 2.3V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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