TK3R3E03GL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK3R3E03GL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 VQgⓘ - Carga de la puerta: 67 nC
trⓘ - Tiempo de subida: 5.8 nS
Cossⓘ - Capacitancia de salida: 710 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET TK3R3E03GL
TK3R3E03GL Datasheet (PDF)
tk3r3e03gl.pdf
TK3R3E03GLMOSFETs Silicon N-Channel MOS (U-MOS-H)TK3R3E03GLTK3R3E03GLTK3R3E03GLTK3R3E03GL1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 30 V)(3)
tk3r3e03gl.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK3R3E03GLITK3R3E03GLFEATURESLow drain-source on-resistance:RDS(on) 3.3m.Enhancement mode:Vth =1.3 to 2.3V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(
tk3r3a06pl.pdf
TK3R3A06PLMOSFETs Silicon N-channel MOS (U-MOS-H)TK3R3A06PLTK3R3A06PLTK3R3A06PLTK3R3A06PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 21 nC (typ.)(3) Small out
tk3r3a06pl.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK3R3A06PLITK3R3A06PLFEATURESLow drain-source on-resistance:RDS(ON) = 2.5m (typ.) (VGS = 10 V)Enhancement mode:Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.7mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOL
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
