Справочник MOSFET. TK3R3E03GL

 

TK3R3E03GL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK3R3E03GL
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 67 nC
   trⓘ - Время нарастания: 5.8 ns
   Cossⓘ - Выходная емкость: 710 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
   Тип корпуса: TO220

 Аналог (замена) для TK3R3E03GL

 

 

TK3R3E03GL Datasheet (PDF)

 ..1. Size:408K  toshiba
 tk3r3e03gl.pdf

TK3R3E03GL TK3R3E03GL

TK3R3E03GLMOSFETs Silicon N-Channel MOS (U-MOS-H)TK3R3E03GLTK3R3E03GLTK3R3E03GLTK3R3E03GL1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 30 V)(3)

 ..2. Size:245K  inchange semiconductor
 tk3r3e03gl.pdf

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INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK3R3E03GLITK3R3E03GLFEATURESLow drain-source on-resistance:RDS(on) 3.3m.Enhancement mode:Vth =1.3 to 2.3V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

 9.1. Size:492K  toshiba
 tk3r3a06pl.pdf

TK3R3E03GL TK3R3E03GL

TK3R3A06PLMOSFETs Silicon N-channel MOS (U-MOS-H)TK3R3A06PLTK3R3A06PLTK3R3A06PLTK3R3A06PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 21 nC (typ.)(3) Small out

 9.2. Size:253K  inchange semiconductor
 tk3r3a06pl.pdf

TK3R3E03GL TK3R3E03GL

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK3R3A06PLITK3R3A06PLFEATURESLow drain-source on-resistance:RDS(ON) = 2.5m (typ.) (VGS = 10 V)Enhancement mode:Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.7mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOL

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