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TK560A65Y MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK560A65Y
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 18 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.56 Ohm
   Paquete / Cubierta: TO-220F
 

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TK560A65Y Datasheet (PDF)

 ..1. Size:445K  toshiba
 tk560a65y.pdf pdf_icon

TK560A65Y

TK560A65YMOSFETs Silicon N-Channel MOS (DTMOS)TK560A65YTK560A65YTK560A65YTK560A65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.43 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 ..2. Size:252K  inchange semiconductor
 tk560a65y.pdf pdf_icon

TK560A65Y

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK560A65YITK560A65YFEATURESLow drain-source on-resistance: RDS(ON) = 0.56Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.24mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

 7.1. Size:444K  toshiba
 tk560a60y.pdf pdf_icon

TK560A65Y

TK560A60YMOSFETs Silicon N-Channel MOS (DTMOS)TK560A60YTK560A60YTK560A60YTK560A60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.43 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 7.2. Size:252K  inchange semiconductor
 tk560a60y.pdf pdf_icon

TK560A65Y

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK560A60YITK560A60YFEATURESLow drain-source on-resistance: RDS(ON) = 0.56Easy to control Gate switchingEnhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.24mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

MOSTRAR MÁS

Otros transistores... TK3A90E , TK3R1A04PL , TK3R3A06PL , TK3R3E03GL , TK4A80E , TK4R3A06PL , TK4R3E06PL , TK560A60Y , IRLZ44N , TK5A90E , TK5R1E06PL , TK5R3A06PL , TK7E80W , TK8R2A06PL , TK8R2E06PL , FS5KM-10A , HY3810P .

History: IXFK30N110P | STWA40N90K5

 

 
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