TK560A65Y Specs and Replacement
Type Designator: TK560A65Y
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.56 Ohm
Package: TO-220F
TK560A65Y substitution
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TK560A65Y datasheet
tk560a65y.pdf
TK560A65Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK560A65Y TK560A65Y TK560A65Y TK560A65Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.43 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒
tk560a60y.pdf
TK560A60Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK560A60Y TK560A60Y TK560A60Y TK560A60Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.43 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒
tk560a60y.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK560A60Y ITK560A60Y FEATURES Low drain-source on-resistance RDS(ON) = 0.56 Easy to control Gate switching Enhancement mode Vth = 3 to 4V (VDS = 10 V, ID=0.24mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ... See More ⇒
Detailed specifications: TK3A90E, TK3R1A04PL, TK3R3A06PL, TK3R3E03GL, TK4A80E, TK4R3A06PL, TK4R3E06PL, TK560A60Y, AON7408, TK5A90E, TK5R1E06PL, TK5R3A06PL, TK7E80W, TK8R2A06PL, TK8R2E06PL, FS5KM-10A, HY3810P
Keywords - TK560A65Y MOSFET specs
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