All MOSFET. TK560A65Y Datasheet

 

TK560A65Y Datasheet and Replacement


   Type Designator: TK560A65Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.56 Ohm
   Package: TO-220F
 

 TK560A65Y substitution

   - MOSFET ⓘ Cross-Reference Search

 

TK560A65Y Datasheet (PDF)

 ..1. Size:445K  toshiba
 tk560a65y.pdf pdf_icon

TK560A65Y

TK560A65YMOSFETs Silicon N-Channel MOS (DTMOS)TK560A65YTK560A65YTK560A65YTK560A65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.43 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 ..2. Size:252K  inchange semiconductor
 tk560a65y.pdf pdf_icon

TK560A65Y

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK560A65YITK560A65YFEATURESLow drain-source on-resistance: RDS(ON) = 0.56Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.24mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

 7.1. Size:444K  toshiba
 tk560a60y.pdf pdf_icon

TK560A65Y

TK560A60YMOSFETs Silicon N-Channel MOS (DTMOS)TK560A60YTK560A60YTK560A60YTK560A60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.43 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 7.2. Size:252K  inchange semiconductor
 tk560a60y.pdf pdf_icon

TK560A65Y

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK560A60YITK560A60YFEATURESLow drain-source on-resistance: RDS(ON) = 0.56Easy to control Gate switchingEnhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.24mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

SHOW MORE

Datasheet: TK3A90E , TK3R1A04PL , TK3R3A06PL , TK3R3E03GL , TK4A80E , TK4R3A06PL , TK4R3E06PL , TK560A60Y , AON7408 , TK5A90E , TK5R1E06PL , TK5R3A06PL , TK7E80W , TK8R2A06PL , TK8R2E06PL , FS5KM-10A , HY3810P .

History: TK560A60Y

Keywords - TK560A65Y MOSFET datasheet

 TK560A65Y cross reference
 TK560A65Y equivalent finder
 TK560A65Y lookup
 TK560A65Y substitution
 TK560A65Y replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.