TK8R2E06PL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK8R2E06PL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 81 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 50 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 28 nC
Tiempo de subida (tr): 5 nS
Conductancia de drenaje-sustrato (Cd): 350 pF
Resistencia entre drenaje y fuente RDS(on): 0.0082 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET TK8R2E06PL
TK8R2E06PL Datasheet (PDF)
tk8r2e06pl.pdf
TK8R2E06PLMOSFETs Silicon N-channel MOS (U-MOS-H)TK8R2E06PLTK8R2E06PLTK8R2E06PLTK8R2E06PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 9.7 nC (typ.)(3) Small ou
tk8r2e06pl.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK8R2E06PLITK8R2E06PLFEATURESLow drain-source on-resistance:RDS(on) 8.2m. (VGS = 10 V)Enhancement mode:Vth =1.5 to 2.5V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX
tk8r2a06pl.pdf
TK8R2A06PLMOSFETs Silicon N-channel MOS (U-MOS-H)TK8R2A06PLTK8R2A06PLTK8R2A06PLTK8R2A06PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 10 nC (typ.)(3) Small out
tk8r2a06pl.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8R2A06PLITK8R2A06PLFEATURESLow drain-source on-resistance:RDS(ON) = 8.2m (VGS = 10 V)Enhancement mode:Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
