Справочник MOSFET. TK8R2E06PL

 

TK8R2E06PL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK8R2E06PL
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 81 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Максимально допустимый постоянный ток стока |Id|: 50 A
   Максимальная температура канала (Tj): 175 °C
   Время нарастания (tr): 5 ns
   Выходная емкость (Cd): 350 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0082 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для TK8R2E06PL

 

 

TK8R2E06PL Datasheet (PDF)

 ..1. Size:545K  toshiba
tk8r2e06pl.pdf

TK8R2E06PL
TK8R2E06PL

TK8R2E06PLMOSFETs Silicon N-channel MOS (U-MOS-H)TK8R2E06PLTK8R2E06PLTK8R2E06PLTK8R2E06PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 9.7 nC (typ.)(3) Small ou

 ..2. Size:246K  inchange semiconductor
tk8r2e06pl.pdf

TK8R2E06PL
TK8R2E06PL

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK8R2E06PLITK8R2E06PLFEATURESLow drain-source on-resistance:RDS(on) 8.2m. (VGS = 10 V)Enhancement mode:Vth =1.5 to 2.5V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX

 9.1. Size:601K  toshiba
tk8r2a06pl.pdf

TK8R2E06PL
TK8R2E06PL

TK8R2A06PLMOSFETs Silicon N-channel MOS (U-MOS-H)TK8R2A06PLTK8R2A06PLTK8R2A06PLTK8R2A06PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 10 nC (typ.)(3) Small out

 9.2. Size:258K  inchange semiconductor
tk8r2a06pl.pdf

TK8R2E06PL
TK8R2E06PL

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8R2A06PLITK8R2A06PLFEATURESLow drain-source on-resistance:RDS(ON) = 8.2m (VGS = 10 V)Enhancement mode:Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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