SFW9530 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SFW9530
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 66 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de SFW9530 MOSFET
SFW9530 Datasheet (PDF)
sfw9530.pdf

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -10.5 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.225 (Typ.)112331. Gate 2. Drain 3. SourceAbsol
sfw9530tm.pdf

SFW/I9530Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.3 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -10.5 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.225 (Typ.)112331. Ga
sfi9510 sfw9510.pdf

SFW/I9510Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 1.2n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -3.6 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.912 (Typ.)112331. Gate
sfw9540.pdf

SFW/I9540Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.2n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -17 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.161 (Typ.)112331. Gat
Otros transistores... SFU9210 , SFU9214 , SFU9220 , SFU9224 , SFU9310 , SFW2955 , SFW9510 , SFW9520 , 2SK3878 , SFW9540 , SFW9610 , SFW9614 , SFW9620 , SFW9624 , SFW9630 , SFW9634 , SFW9640 .
History: SSA47N60SFD | WTK9431 | IRLML2502GPBF | IXTQ100N25P | TK19H50C | SSRF50P04-16 | WML20N50D1
History: SSA47N60SFD | WTK9431 | IRLML2502GPBF | IXTQ100N25P | TK19H50C | SSRF50P04-16 | WML20N50D1



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