SFW9530 Datasheet: MOSFET, P-Ch, 100V, 10.5A. Full specification with pinout and replacement list

SFW9530 Datasheet. Specs and Replacement

Type Designator: SFW9530 📄📄

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 66 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO263

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SFW9530 substitution

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SFW9530 datasheet

..1. Size:504K samsung
sfw9530.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -10.5 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = -100V Low RDS(ON) 0.225 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absol... See More ⇒

0.1. Size:233K fairchild semi
sfw9530tm.pdf pdf_icon

SFW/I9530 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 0.3 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -10.5 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK I2-PAK n 175oC Operating Temperature 2 n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Low RDS(ON) 0.225 (Typ.) 1 1 2 3 3 1. Ga... See More ⇒

9.1. Size:230K fairchild semi
sfi9510 sfw9510.pdf pdf_icon

SFW/I9510 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 1.2 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -3.6 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK I2-PAK n 175oC Operating Temperature 2 n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Low RDS(ON) 0.912 (Typ.) 1 1 2 3 3 1. Gate... See More ⇒

9.2. Size:201K fairchild semi
sfw9540.pdf pdf_icon

SFW/I9540 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 0.2 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -17 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK I2-PAK n 175oC Operating Temperature 2 n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Low RDS(ON) 0.161 (Typ.) 1 1 2 3 3 1. Gat... See More ⇒