SFW9610 Todos los transistores

 ..1. Size:254K  fairchild semi
 sfi9610 sfw9610.pdf

SFW/I9610 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.75 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) 2.084 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maxi

 ..2. Size:497K  samsung
 sfw9610.pdf

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.75 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) 2.084 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch

 8.1. Size:506K  samsung
 sfw9614.pdf

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -250V 2 Low RDS(ON) 3.5 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char

 9.1. Size:259K  fairchild semi
 sfi9624 sfw9624.pdf

SFW/I9624 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.7 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current 10 A (Max.) @ VDS = -250V 2 Low RDS(ON) 1.65 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum

 9.2. Size:259K  fairchild semi
 sfw9640tm.pdf

SFW/I9640 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -11 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) 0.344 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum

 9.3. Size:256K  fairchild semi
 sfi9630 sfw9630.pdf

SFW/I9630 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = -6.5 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) 0.581 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu

 9.4. Size:263K  fairchild semi
 sfi9644 sfw9644.pdf

SFW/I9644 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = -8.6 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current 10 A (Max.) @ VDS = -250V 2 Low RDS(ON) 0.549 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu

 9.5. Size:264K  fairchild semi
 sfi9640 sfw9640.pdf

SFW/I9640 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -11 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) 0.344 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum

 9.6. Size:251K  fairchild semi
 sfi9620 sfw9620.pdf

SFW/I9620 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.5 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) 1.111 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu

 9.7. Size:502K  samsung
 sfw9624.pdf

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -250V 2 Low RDS(ON) 1.65 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

 9.8. Size:502K  samsung
 sfw9634.pdf

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -5.0 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -250V 2 Low RDS(ON) 0.876 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

 9.9. Size:504K  samsung
 sfw9620.pdf

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) 1.111 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch

 9.10. Size:506K  samsung
 sfw9640.pdf

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) 0.344 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

 9.11. Size:501K  samsung
 sfw9630.pdf

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = -6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) 0.581 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch