SFW9610 Datasheet and Replacement
   Type Designator: SFW9610
   Type of Transistor: MOSFET
   Type of Control Channel: P
 -Channel   
Pd ⓘ
 - Maximum Power Dissipation: 20
 W   
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
 V   
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
 V   
|Id| ⓘ - Maximum Drain Current: 1.75
 A   
Tj ⓘ - Maximum Junction Temperature: 150
 °C   
tr ⓘ - Rise Time: 20
 nS   
Cossⓘ - 
Output Capacitance: 45
 pF   
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3
 Ohm
		   Package: 
TO263
				
				  
				 
   - 
MOSFET ⓘ Cross-Reference Search
 
		
SFW9610 Datasheet (PDF)
 ..1.  Size:254K  fairchild semi
 sfi9610 sfw9610.pdf 
 
						  
 
SFW/I9610Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology  Lower Input CapacitanceID = -1.75 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 2.084  (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maxi
 ..2.  Size:497K  samsung
 sfw9610.pdf 
 
						  
 
  Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology  Lower Input CapacitanceID = -1.75 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 2.084  (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch
 8.1.  Size:506K  samsung
 sfw9614.pdf 
 
						  
 
  Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 4.0  Rugged Gate Oxide Technology  Lower Input CapacitanceID = -1.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V2 Low RDS(ON) : 3.5  (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Char
 9.1.  Size:259K  fairchild semi
 sfi9624 sfw9624.pdf 
 
						  
 
SFW/I9624Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 2.4  Rugged Gate Oxide Technology  Lower Input CapacitanceID = -2.7 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -250V2 Low RDS(ON) : 1.65  (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum
 9.2.  Size:259K  fairchild semi
 sfw9640tm.pdf 
 
						  
 
SFW/I9640Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5  Rugged Gate Oxide Technology  Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.344  (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum
 9.3.  Size:256K  fairchild semi
 sfi9630 sfw9630.pdf 
 
						  
 
SFW/I9630Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.8  Rugged Gate Oxide Technology  Lower Input CapacitanceID = -6.5 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.581  (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximu
 9.4.  Size:263K  fairchild semi
 sfi9644 sfw9644.pdf 
 
						  
 
SFW/I9644Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 0.8  Rugged Gate Oxide Technology  Lower Input CapacitanceID = -8.6 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -250V2 Low RDS(ON) : 0.549  (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximu
 9.5.  Size:264K  fairchild semi
 sfi9640 sfw9640.pdf 
 
						  
 
SFW/I9640Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5  Rugged Gate Oxide Technology  Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.344  (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum
 9.6.  Size:251K  fairchild semi
 sfi9620 sfw9620.pdf 
 
						  
 
SFW/I9620Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 1.5  Rugged Gate Oxide Technology  Lower Input CapacitanceID = -3.5 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 1.111  (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximu
 9.7.  Size:502K  samsung
 sfw9624.pdf 
 
						  
 
  Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 2.4  Rugged Gate Oxide Technology  Lower Input CapacitanceID = -2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V2 Low RDS(ON) : 1.65  (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha
 9.8.  Size:502K  samsung
 sfw9634.pdf 
 
						  
 
  Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology  Lower Input CapacitanceID = -5.0 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V2 Low RDS(ON) : 0.876  (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha
 9.9.  Size:504K  samsung
 sfw9620.pdf 
 
						  
 
  Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 1.5  Rugged Gate Oxide Technology  Lower Input CapacitanceID = -3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 1.111  (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch
 9.10.  Size:506K  samsung
 sfw9640.pdf 
 
						  
 
  Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5  Rugged Gate Oxide Technology  Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.344  (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha
 9.11.  Size:501K  samsung
 sfw9630.pdf 
 
						  
 
  Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.8  Rugged Gate Oxide Technology  Lower Input CapacitanceID = -6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.581  (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch
Datasheet: SFU9220
, SFU9224
, SFU9310
, SFW2955
, SFW9510
, SFW9520
, SFW9530
, SFW9540
, STP75NF75
, SFW9614
, SFW9620
, SFW9624
, SFW9630
, SFW9634
, SFW9640
, SFW9644
, SFW9Z14
. 
History: U105D
Keywords - SFW9610 MOSFET datasheet
 SFW9610 cross reference
 SFW9610 equivalent finder
 SFW9610 lookup
 SFW9610 substitution
 SFW9610 replacement
 
 
