TPC8228H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8228H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1.8 nS
Cossⓘ - Capacitancia de salida: 90 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.057 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de TPC8228H MOSFET
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TPC8228H datasheet
tpc8228-h.pdf
TPC8228-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8228-H TPC8228-H TPC8228-H TPC8228-H 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters CCFL Inverters 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 2.6 nC (typ.) (4) Low drain-source on-resistance RDS(O
tpc8224-h.pdf
TPC8224-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8224-H TPC8224-H TPC8224-H TPC8224-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate change QSW = 1.9 nC (typ.) (4) Lo
tpc8227-h.pdf
TPC8227-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8227-H TPC8227-H TPC8227-H TPC8227-H 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters CCFL Inverters 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate charge QSW = 2.4 nC (typ.) (4) Low drain-source on-resistance RDS(O
tpc8223-h.pdf
TPC8223-H MOSFETs Silicon N-Channel MOS (U-MOS -H) TPC8223-H TPC8223-H TPC8223-H TPC8223-H 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate change QSW = 3.6 nC (typ.) (4) Lo
Otros transistores... CSN64N12 , D7509 , FD7509 , ID7509 , ED7509 , DFF2N60 , NCE60H10F , STK0760P , SI2302 , SUP60N06-18 , SUB60N06-18 , BLV108 , BLV1N60 , BLV1N60A , BLV2N60 , BLV4N60 , BLV640 .
History: XG65T230PS1B
History: XG65T230PS1B
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