TPC8228H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8228H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1.8 nS
Cossⓘ - Capacitancia de salida: 90 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.057 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de TPC8228H MOSFET
TPC8228H Datasheet (PDF)
tpc8228-h.pdf

TPC8228-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8228-HTPC8228-HTPC8228-HTPC8228-H1. Applications1. Applications1. Applications1. Applications DC-DC Converters CCFL Inverters2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 2.6 nC (typ.)(4) Low drain-source on-resistance: RDS(O
tpc8224-h.pdf

TPC8224-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8224-HTPC8224-HTPC8224-HTPC8224-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate change: QSW = 1.9 nC (typ.)(4) Lo
tpc8227-h.pdf

TPC8227-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8227-HTPC8227-HTPC8227-HTPC8227-H1. Applications1. Applications1. Applications1. Applications DC-DC Converters CCFL Inverters2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 2.4 nC (typ.)(4) Low drain-source on-resistance: RDS(O
tpc8223-h.pdf

TPC8223-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8223-HTPC8223-HTPC8223-HTPC8223-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate change: QSW = 3.6 nC (typ.)(4) Lo
Otros transistores... CSN64N12 , D7509 , FD7509 , ID7509 , ED7509 , DFF2N60 , NCE60H10F , STK0760P , IRFZ46N , SUP60N06-18 , SUB60N06-18 , BLV108 , BLV1N60 , BLV1N60A , BLV2N60 , BLV4N60 , BLV640 .
History: 17P10L-TA3-T | 13N50L-TA3-T | VBE1310
History: 17P10L-TA3-T | 13N50L-TA3-T | VBE1310



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