TPC8228H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPC8228H
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.8 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 11 nC
trⓘ - Время нарастания: 1.8 ns
Cossⓘ - Выходная емкость: 90 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.057 Ohm
Тип корпуса: SOP8
TPC8228H Datasheet (PDF)
tpc8228-h.pdf
TPC8228-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8228-HTPC8228-HTPC8228-HTPC8228-H1. Applications1. Applications1. Applications1. Applications DC-DC Converters CCFL Inverters2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 2.6 nC (typ.)(4) Low drain-source on-resistance: RDS(O
tpc8224-h.pdf
TPC8224-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8224-HTPC8224-HTPC8224-HTPC8224-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate change: QSW = 1.9 nC (typ.)(4) Lo
tpc8227-h.pdf
TPC8227-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8227-HTPC8227-HTPC8227-HTPC8227-H1. Applications1. Applications1. Applications1. Applications DC-DC Converters CCFL Inverters2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 2.4 nC (typ.)(4) Low drain-source on-resistance: RDS(O
tpc8223-h.pdf
TPC8223-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8223-HTPC8223-HTPC8223-HTPC8223-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate change: QSW = 3.6 nC (typ.)(4) Lo
tpc8221-h.pdf
TPC8221-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8221-HTPC8221-HTPC8221-HTPC8221-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate change: QSW = 3.5 nC (typ.)(4) Lo
tpc8229-h.pdf
TPC8229-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8229-HTPC8229-HTPC8229-HTPC8229-H1. Applications1. Applications1. Applications1. Applications DC-DC Converters CCFL Inverters2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 2.4 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 53 m (typ.)(4)
tpc8223-h.pdf
TPC8223-Hwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.010 at VGS = 10 V 1230 5.9 nC Optimized for High-Side Synchronous0.012 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
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