BS107 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETBS107N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBS107D-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER MAX. UNITetc.VDS drain

VN2010L/BS107Vishay SiliconixN-Channel 200-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)VN2010L 10 @ VGS = 4.5 V 0.8 to 1.8 0.19200BS107 28 @ VGS = 2.8 V 0.8 to 3 0.12D Low On-Resistance: 6 W D Low Offset Voltage D High-Voltage Drivers: Relays, Solenoids,Lamps, Hammers, Displays, Transistors, etc.D Secondary Breakdown Free: 220

BS 107SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0VPin 1 Pin 2 Pin 3S G DType VDS ID RDS(on) Package MarkingBS 107 200 V 0.13 A 26 TO-92 BS 107Type Ordering Code Tape and Reel InformationBS 107 Q67000-S078 E6288Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 200 VVDrain-gate volta

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BS107/DTMOS SwitchingBS107NChannel Enhancement1 DRAINBS107A2GATE3 SOURCEMAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDS 200 Vdc123GateSource Voltage Continuous VGS 20 VdcCASE 2904, STYLE 30 Nonrepetitive (tp 50 s) VGSM 30 VpkTO92 (TO2

DISCRETE SEMICONDUCTORSDATA SHEETBS107AN-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBS107AD-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,Drain-source voltage VDS max. 200 Vetc.

TN2404K/TN2404KL/BS107KLVishay SiliconixN-Channel 240 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low On-Resistance: 4 VGS(th)Part VDS RDS(on) ID Qg Secondary Breakdown Free: 260 VNumber (V) () (A) (Typ.)(A) Low Power/Voltage DrivenTN2404K 0.2 Low Input and Output Leakage240 4 at VGS = 10 V 0.8 to 2 4.87 nCTN2404K, Excellent Thermal Stability

TN2404K/TN2404KL/BS107KLVishay SiliconixN-Channel 240 -V (D-S) MOSFETPRODUCT SUMMARYPart Number VDS Min (V) rDS(on) (W) VGS(th) (V) ID (A) Qg (Typ)TN2404K 4 @ VGS = 10 V 0.8 to 2.0 0.2240 487240 4.87TN2404KL/BS107KL 4 @ VGS = 10 V 0.8 to 2.0 0.3FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 4 W D Low Offset Voltage D High-Voltage Drivers: Relays, Solenoids,Lamps, Hamme

TN2404K/TN2404KL/BS107KLVishay SiliconixN-Channel 240 -V (D-S) MOSFETPRODUCT SUMMARYPart Number VDS Min (V) rDS(on) (W) VGS(th) (V) ID (A) Qg (Typ)TN2404K 4 @ VGS = 10 V 0.8 to 2.0 0.2240 487240 4.87TN2404KL/BS107KL 4 @ VGS = 10 V 0.8 to 2.0 0.3FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 4 W D Low Offset Voltage D High-Voltage Drivers: Relays, Solenoids,Lamps, Hamme

N-CHANNEL ENHANCEMENTPT BS107PTMODE VERTICAL DMOS FETISSUE 2 SEPT 93FEATURES* 200 Volt VDSVGS=* RDS(on)=2810V 6VD4V G SE-LineTO92 Compatible3VABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT8 10Drain-Source Voltage VDS 200 VContinuous Drain Current at Tamb=25C ID 0.12 APulsed Drain Current IDM 2AGate-Source Voltage VGS 20 VPower Dis

N-CHANNEL ENHANCEMENTBS107PMODE VERTICAL DMOS FETISSUE 2 SEPT 93FEATURES* 200 Volt VDS* RDS(on)=23D G SREFER TO BS107PT FOR GRAPHSE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 200 VContinuous Drain Current at Tamb=25C ID 0.12 APulsed Drain Current IDM 2AGate-Source Voltage VGS 20 VPower Dissipat

BS107ASmall Signal MOSFET250 mAmps, 200 VoltsN-Channel TO-92Featureshttp://onsemi.com AEC Qualified250 mAMPS, 200 VOLTS PPAP CapableRDS(on) = 6.4 W This is a Pb-Free Device*N-ChannelDMAXIMUM RATINGSRating Symbol Value UnitGDrain -Source Voltage VDS 200 VdcGate-Source Voltage- Continuous VGS 20 VdcS- Non-repetitive (tp 50 ms) VGSM 30 Vpk

BS107ASmall Signal MOSFET250 mAmps, 200 VoltsN-Channel TO-92Featureshttp://onsemi.com AEC Qualified250 mAMPS, 200 VOLTS PPAP CapableRDS(on) = 6.4 W This is a Pb-Free Device*N-ChannelDMAXIMUM RATINGSRating Symbol Value UnitGDrain -Source Voltage VDS 200 VdcGate-Source Voltage- Continuous VGS 20 VdcS- Non-repetitive (tp 50 ms) VGSM 30 Vpk

N-CHANNEL ENHANCEMENTBS107PMODE VERTICAL DMOS FETISSUE 2 SEPT 93FEATURES* 200 Volt VDS* RDS(on)=23D G SREFER TO BS107PT FOR GRAPHSE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 200 VContinuous Drain Current at Tamb=25C ID 0.12 APulsed Drain Current IDM 2AGate-Source Voltage VGS 20 VPower Dissipat