BS107 MOSFET. Datasheet pdf. Equivalent

   Type Designator: BS107
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 0.12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 28 Ohm
   Package: TO-92

BS107 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BS107 Datasheet (PDF)

..1. Size:65K philips
bs107 cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBS107N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBS107D-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER MAX. UNITetc.VDS drain

..2. Size:71K vishay
bs107.pdf

VN2010L/BS107Vishay SiliconixN-Channel 200-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)VN2010L 10 @ VGS = 4.5 V 0.8 to 1.8 0.19200BS107 28 @ VGS = 2.8 V 0.8 to 3 0.12D Low On-Resistance: 6 W D Low Offset Voltage D High-Voltage Drivers: Relays, Solenoids,Lamps, Hammers, Displays, Transistors, etc.D Secondary Breakdown Free: 220

..3. Size:86K infineon
bs107.pdf

BS 107SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0VPin 1 Pin 2 Pin 3S G DType VDS ID RDS(on) Package MarkingBS 107 200 V 0.13 A 26 TO-92 BS 107Type Ordering Code Tape and Reel InformationBS 107 Q67000-S078 E6288Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 200 VVDrain-gate volta

0.1. Size:76K motorola
bs107rev1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BS107/DTMOS SwitchingBS107NChannel Enhancement1 DRAINBS107A2GATE3 SOURCEMAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDS 200 Vdc123GateSource Voltage Continuous VGS 20 VdcCASE 2904, STYLE 30 Nonrepetitive (tp 50 s) VGSM 30 VpkTO92 (TO2

0.2. Size:49K philips
bs107a cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBS107AN-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBS107AD-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,Drain-source voltage VDS max. 200 Vetc.

0.3. Size:220K vishay
bs107kl tn2404k.pdf

TN2404K/TN2404KL/BS107KLVishay SiliconixN-Channel 240 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low On-Resistance: 4 VGS(th)Part VDS RDS(on) ID Qg Secondary Breakdown Free: 260 VNumber (V) () (A) (Typ.)(A) Low Power/Voltage DrivenTN2404K 0.2 Low Input and Output Leakage240 4 at VGS = 10 V 0.8 to 2 4.87 nCTN2404K, Excellent Thermal Stability

0.4. Size:89K vishay
tn2404k tn2404kl bs107kl 2.pdf

TN2404K/TN2404KL/BS107KLVishay SiliconixN-Channel 240 -V (D-S) MOSFETPRODUCT SUMMARYPart Number VDS Min (V) rDS(on) (W) VGS(th) (V) ID (A) Qg (Typ)TN2404K 4 @ VGS = 10 V 0.8 to 2.0 0.2240 487240 4.87TN2404KL/BS107KL 4 @ VGS = 10 V 0.8 to 2.0 0.3FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 4 W D Low Offset Voltage D High-Voltage Drivers: Relays, Solenoids,Lamps, Hamme

0.5. Size:70K vishay
tn2404k tn2404kl bs107kl.pdf

0.6. Size:47K diodes
bs107pt.pdf

N-CHANNEL ENHANCEMENTPT BS107PTMODE VERTICAL DMOS FETISSUE 2 SEPT 93FEATURES* 200 Volt VDSVGS=* RDS(on)=2810V 6VD4V G SE-LineTO92 Compatible3VABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT8 10Drain-Source Voltage VDS 200 VContinuous Drain Current at Tamb=25C ID 0.12 APulsed Drain Current IDM 2AGate-Source Voltage VGS 20 VPower Dis

0.7. Size:25K diodes
bs107p.pdf

N-CHANNEL ENHANCEMENTBS107PMODE VERTICAL DMOS FETISSUE 2 SEPT 93FEATURES* 200 Volt VDS* RDS(on)=23D G SREFER TO BS107PT FOR GRAPHSE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 200 VContinuous Drain Current at Tamb=25C ID 0.12 APulsed Drain Current IDM 2AGate-Source Voltage VGS 20 VPower Dissipat

0.8. Size:94K onsemi
bs107a.pdf

BS107ASmall Signal MOSFET250 mAmps, 200 VoltsN-Channel TO-92Featureshttp://onsemi.com AEC Qualified250 mAMPS, 200 VOLTS PPAP CapableRDS(on) = 6.4 W This is a Pb-Free Device*N-ChannelDMAXIMUM RATINGSRating Symbol Value UnitGDrain -Source Voltage VDS 200 VdcGate-Source Voltage- Continuous VGS 20 VdcS- Non-repetitive (tp 50 ms) VGSM 30 Vpk

0.9. Size:89K onsemi
bs107ag bs107arl1 bs107arl1g bs107g.pdf