BS107KL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BS107KL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.8 W
Voltaje máximo drenador - fuente |Vds|: 240 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 0.3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 4.87 nC
Tiempo de subida (tr): 12 nS
Resistencia entre drenaje y fuente RDS(on): 4 Ohm
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de MOSFET BS107KL
BS107KL Datasheet (PDF)
bs107kl tn2404k.pdf
TN2404K/TN2404KL/BS107KLVishay SiliconixN-Channel 240 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low On-Resistance: 4 VGS(th)Part VDS RDS(on) ID Qg Secondary Breakdown Free: 260 VNumber (V) () (A) (Typ.)(A) Low Power/Voltage DrivenTN2404K 0.2 Low Input and Output Leakage240 4 at VGS = 10 V 0.8 to 2 4.87 nCTN2404K, Excellent Thermal Stability
tn2404k tn2404kl bs107kl 2.pdf
TN2404K/TN2404KL/BS107KLVishay SiliconixN-Channel 240 -V (D-S) MOSFETPRODUCT SUMMARYPart Number VDS Min (V) rDS(on) (W) VGS(th) (V) ID (A) Qg (Typ)TN2404K 4 @ VGS = 10 V 0.8 to 2.0 0.2240 487240 4.87TN2404KL/BS107KL 4 @ VGS = 10 V 0.8 to 2.0 0.3FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 4 W D Low Offset Voltage D High-Voltage Drivers: Relays, Solenoids,Lamps, Hamme
tn2404k tn2404kl bs107kl.pdf
TN2404K/TN2404KL/BS107KLVishay SiliconixN-Channel 240 -V (D-S) MOSFETPRODUCT SUMMARYPart Number VDS Min (V) rDS(on) (W) VGS(th) (V) ID (A) Qg (Typ)TN2404K 4 @ VGS = 10 V 0.8 to 2.0 0.2240 487240 4.87TN2404KL/BS107KL 4 @ VGS = 10 V 0.8 to 2.0 0.3FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 4 W D Low Offset Voltage D High-Voltage Drivers: Relays, Solenoids,Lamps, Hamme
bs107rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BS107/DTMOS SwitchingBS107NChannel Enhancement1 DRAINBS107A2GATE3 SOURCEMAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDS 200 Vdc123GateSource Voltage Continuous VGS 20 VdcCASE 2904, STYLE 30 Nonrepetitive (tp 50 s) VGSM 30 VpkTO92 (TO2
bs107a cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBS107AN-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBS107AD-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,Drain-source voltage VDS max. 200 Vetc.
bs107 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBS107N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBS107D-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER MAX. UNITetc.VDS drain
bs107.pdf
VN2010L/BS107Vishay SiliconixN-Channel 200-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)VN2010L 10 @ VGS = 4.5 V 0.8 to 1.8 0.19200BS107 28 @ VGS = 2.8 V 0.8 to 3 0.12D Low On-Resistance: 6 W D Low Offset Voltage D High-Voltage Drivers: Relays, Solenoids,Lamps, Hammers, Displays, Transistors, etc.D Secondary Breakdown Free: 220
bs107pt.pdf
N-CHANNEL ENHANCEMENTPT BS107PTMODE VERTICAL DMOS FETISSUE 2 SEPT 93FEATURES* 200 Volt VDSVGS=* RDS(on)=2810V 6VD4V G SE-LineTO92 Compatible3VABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT8 10Drain-Source Voltage VDS 200 VContinuous Drain Current at Tamb=25C ID 0.12 APulsed Drain Current IDM 2AGate-Source Voltage VGS 20 VPower Dis
bs107p.pdf
N-CHANNEL ENHANCEMENTBS107PMODE VERTICAL DMOS FETISSUE 2 SEPT 93FEATURES* 200 Volt VDS* RDS(on)=23D G SREFER TO BS107PT FOR GRAPHSE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 200 VContinuous Drain Current at Tamb=25C ID 0.12 APulsed Drain Current IDM 2AGate-Source Voltage VGS 20 VPower Dissipat
bs107.pdf
BS 107SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0VPin 1 Pin 2 Pin 3S G DType VDS ID RDS(on) Package MarkingBS 107 200 V 0.13 A 26 TO-92 BS 107Type Ordering Code Tape and Reel InformationBS 107 Q67000-S078 E6288Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 200 VVDrain-gate volta
bs107a.pdf
BS107ASmall Signal MOSFET250 mAmps, 200 VoltsN-Channel TO-92Featureshttp://onsemi.com AEC Qualified250 mAMPS, 200 VOLTS PPAP CapableRDS(on) = 6.4 W This is a Pb-Free Device*N-ChannelDMAXIMUM RATINGSRating Symbol Value UnitGDrain -Source Voltage VDS 200 VdcGate-Source Voltage- Continuous VGS 20 VdcS- Non-repetitive (tp 50 ms) VGSM 30 Vpk
bs107ag bs107arl1 bs107arl1g bs107g.pdf
BS107ASmall Signal MOSFET250 mAmps, 200 VoltsN-Channel TO-92Featureshttp://onsemi.com AEC Qualified250 mAMPS, 200 VOLTS PPAP CapableRDS(on) = 6.4 W This is a Pb-Free Device*N-ChannelDMAXIMUM RATINGSRating Symbol Value UnitGDrain -Source Voltage VDS 200 VdcGate-Source Voltage- Continuous VGS 20 VdcS- Non-repetitive (tp 50 ms) VGSM 30 Vpk
bs107pstoa bs107pstob bs107pstz.pdf
N-CHANNEL ENHANCEMENTBS107PMODE VERTICAL DMOS FETISSUE 2 SEPT 93FEATURES* 200 Volt VDS* RDS(on)=23D G SREFER TO BS107PT FOR GRAPHSE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 200 VContinuous Drain Current at Tamb=25C ID 0.12 APulsed Drain Current IDM 2AGate-Source Voltage VGS 20 VPower Dissipat
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