BS107KL - описание и поиск аналогов

TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Low On-Resistance 4 VGS(th) Part VDS RDS(on) ID Qg Secondary Breakdown Free 260 V Number (V) ( ) (A) (Typ.) (A) Low Power/Voltage Driven TN2404K 0.2 Low Input and Output Leakage 240 4 at VGS = 10 V 0.8 to 2 4.87 nC TN2404K, Excellent Thermal Stability

TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 -V (D-S) MOSFET PRODUCT SUMMARY Part Number VDS Min (V) rDS(on) (W) VGS(th) (V) ID (A) Qg (Typ) TN2404K 4 @ VGS = 10 V 0.8 to 2.0 0.2 240 487 240 4.87 TN2404KL/BS107KL 4 @ VGS = 10 V 0.8 to 2.0 0.3 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 4 W D Low Offset Voltage D High-Voltage Drivers Relays, Solenoids, Lamps, Hamme

TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 -V (D-S) MOSFET PRODUCT SUMMARY Part Number VDS Min (V) rDS(on) (W) VGS(th) (V) ID (A) Qg (Typ) TN2404K 4 @ VGS = 10 V 0.8 to 2.0 0.2 240 487 240 4.87 TN2404KL/BS107KL 4 @ VGS = 10 V 0.8 to 2.0 0.3 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 4 W D Low Offset Voltage D High-Voltage Drivers Relays, Solenoids, Lamps, Hamme

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS107/D TMOS Switching BS107 N Channel Enhancement 1 DRAIN BS107A 2 GATE 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 200 Vdc 1 2 3 Gate Source Voltage Continuous VGS 20 Vdc CASE 29 04, STYLE 30 Non repetitive (tp 50 s) VGSM 30 Vpk TO 92 (TO 2

DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BS107A D-MOS transistor FEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL, Drain-source voltage VDS max. 200 V etc.

DISCRETE SEMICONDUCTORS DATA SHEET BS107 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BS107 D-MOS transistor FEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain

VN2010L/BS107 Vishay Siliconix N-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN2010L 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 200 BS107 28 @ VGS = 2.8 V 0.8 to 3 0.12 D Low On-Resistance 6 W D Low Offset Voltage D High-Voltage Drivers Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Secondary Breakdown Free 220

N-CHANNEL ENHANCEMENT PT BS107PT MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 200 Volt VDS VGS= * RDS(on)=28 10V 6V D 4V G S E-Line TO92 Compatible 3V ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT 8 10 Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25 C ID 0.12 A Pulsed Drain Current IDM 2A Gate-Source Voltage VGS 20 V Power Dis

N-CHANNEL ENHANCEMENT BS107P MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23 D G S REFER TO BS107PT FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25 C ID 0.12 A Pulsed Drain Current IDM 2A Gate-Source Voltage VGS 20 V Power Dissipat

BS 107 SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 S G D Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 TO-92 BS 107 Type Ordering Code Tape and Reel Information BS 107 Q67000-S078 E6288 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 200 V V Drain-gate volta

BS107A Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features http //onsemi.com AEC Qualified 250 mAMPS, 200 VOLTS PPAP Capable RDS(on) = 6.4 W This is a Pb-Free Device* N-Channel D MAXIMUM RATINGS Rating Symbol Value Unit G Drain -Source Voltage VDS 200 Vdc Gate-Source Voltage - Continuous VGS 20 Vdc S - Non-repetitive (tp 50 ms) VGSM 30 Vpk

BS107A Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features http //onsemi.com AEC Qualified 250 mAMPS, 200 VOLTS PPAP Capable RDS(on) = 6.4 W This is a Pb-Free Device* N-Channel D MAXIMUM RATINGS Rating Symbol Value Unit G Drain -Source Voltage VDS 200 Vdc Gate-Source Voltage - Continuous VGS 20 Vdc S - Non-repetitive (tp 50 ms) VGSM 30 Vpk

N-CHANNEL ENHANCEMENT BS107P MODE VERTICAL DMOS FET ISSUE 2 SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23 D G S REFER TO BS107PT FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25 C ID 0.12 A Pulsed Drain Current IDM 2A Gate-Source Voltage VGS 20 V Power Dissipat