BS108G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BS108G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: TO-92

Búsqueda de reemplazo de MOSFET BS108G

BS108G Datasheet (PDF)

..1. Size:86K onsemi
bs108g bs108zl1g.pdf

BS108Small Signal MOSFET250 mAmps, 200 Volts,Logic LevelN-Channel TO-92http://onsemi.comThis MOSFET is designed for high voltage, high speed switching250 mAMPSapplications such as line drivers, relay drivers, CMOS logic,200 VOLTSmicroprocessor or TTL to high voltage interface and high voltagedisplay drivers. RDS(on) = 8 WFeaturesN-Channel Low Drive Requirement, VG

9.1. Size:58K motorola
bs108rev0.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BS108/DBS108Logic Level TMOSNChannel Enhancement ModeThis TMOS FET is designed for high voltage, high speedswitching applications such as line drivers, relay drivers, CMOS200 VOLTSlogic, microprocessor or TTL to high voltage interface and highNCHANNEL TMOSvoltage display drivers.POWER FET1 DRAIN

9.2. Size:49K philips
bs108 cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBS108N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBS108D-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER MAX. UNITetc.VDS drain

9.3. Size:54K philips
bs108.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BS108N-channel enhancement modevertical D-MOS transistorProduct specification 2001 May 18Supersedes data of 1997 Jun 17Philips Semiconductors Product specificationN-channel enhancement modeBS108vertical D-MOS transistorFEATURES PINNING - SOT54 Direct interface to C-MOS, TTL, etc.PIN DESCRIPTION High-spee

9.4. Size:91K onsemi
bs108.pdf

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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