BS108G MOSFET Datasheet: N-Ch, 200V, 0.25A. Full specification with pinout and replacement list

BS108G Specs and Replacement

Type Designator: BS108G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO-92

BS108G substitution

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BS108G datasheet

..1. Size:86K onsemi
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BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N-Channel TO-92 http //onsemi.com This MOSFET is designed for high voltage, high speed switching 250 mAMPS applications such as line drivers, relay drivers, CMOS logic, 200 VOLTS microprocessor or TTL to high voltage interface and high voltage display drivers. RDS(on) = 8 W Features N-Channel Low Drive Requirement, VG... See More ⇒

9.1. Size:58K motorola
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9.2. Size:49K philips
bs108 cnv 2.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BS108 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BS108 D-MOS transistor FEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS drain... See More ⇒

9.3. Size:54K philips
bs108.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BS108 N-channel enhancement mode vertical D-MOS transistor Product specification 2001 May 18 Supersedes data of 1997 Jun 17 Philips Semiconductors Product specification N-channel enhancement mode BS108 vertical D-MOS transistor FEATURES PINNING - SOT54 Direct interface to C-MOS, TTL, etc. PIN DESCRIPTION High-spee... See More ⇒