SFW9644 Todos los transistores

 

SFW9644 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SFW9644

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 123 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 175 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: TO263

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SFW9644 datasheet

 ..1. Size:263K  fairchild semi
 sfi9644 sfw9644.pdf pdf_icon

SFW9644

SFW/I9644 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = -8.6 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current 10 A (Max.) @ VDS = -250V 2 Low RDS(ON) 0.549 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu

 8.1. Size:259K  fairchild semi
 sfw9640tm.pdf pdf_icon

SFW9644

SFW/I9640 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -11 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) 0.344 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum

 8.2. Size:264K  fairchild semi
 sfi9640 sfw9640.pdf pdf_icon

SFW9644

SFW/I9640 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -11 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) 0.344 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum

 8.3. Size:506K  samsung
 sfw9640.pdf pdf_icon

SFW9644

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) 0.344 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

MOSTRAR MÁS

Otros transistores... SFW9540 , SFW9610 , SFW9614 , SFW9620 , SFW9624 , SFW9630 , SFW9634 , SFW9640 , IRF9540N , SFW9Z14 , SFW9Z24 , SFW9Z34 , SI3443DVPBF , SI3812DV , SI3851DV , SI3853DV , SI4410DY .

History: SGM2305A | 2SK3109-ZJ | BRFL20N65 | HM1404D

 

 

 

 

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