SFW9644 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SFW9644
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 123 W
Voltaje máximo drenador - fuente |Vds|: 250 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 8.6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 45 nC
Tiempo de subida (tr): 21 nS
Conductancia de drenaje-sustrato (Cd): 175 pF
Resistencia entre drenaje y fuente RDS(on): 0.8 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET SFW9644
SFW9644 Datasheet (PDF)
sfi9644 sfw9644.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SFW/I9644Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -8.6 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -250V2 Low RDS(ON) : 0.549 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximu
sfw9640tm.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SFW/I9640Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.344 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum
sfi9640 sfw9640.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SFW/I9640Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.344 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum
sfw9640.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.344 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha
Otros transistores... SFW9540 , SFW9610 , SFW9614 , SFW9620 , SFW9624 , SFW9630 , SFW9634 , SFW9640 , SPP20N60C3 , SFW9Z14 , SFW9Z24 , SFW9Z34 , SI3443DVPBF , SI3812DV , SI3851DV , SI3853DV , SI4410DY .