SFW9644 Todos los transistores

 

SFW9644 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SFW9644
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 123 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 175 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO263
 

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SFW9644 Datasheet (PDF)

 ..1. Size:263K  fairchild semi
 sfi9644 sfw9644.pdf pdf_icon

SFW9644

SFW/I9644Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -8.6 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -250V2 Low RDS(ON) : 0.549 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximu

 8.1. Size:259K  fairchild semi
 sfw9640tm.pdf pdf_icon

SFW9644

SFW/I9640Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.344 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum

 8.2. Size:264K  fairchild semi
 sfi9640 sfw9640.pdf pdf_icon

SFW9644

SFW/I9640Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.344 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum

 8.3. Size:506K  samsung
 sfw9640.pdf pdf_icon

SFW9644

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.344 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

MOSTRAR MÁS

Otros transistores... SFW9540 , SFW9610 , SFW9614 , SFW9620 , SFW9624 , SFW9630 , SFW9634 , SFW9640 , IRF1010E , SFW9Z14 , SFW9Z24 , SFW9Z34 , SI3443DVPBF , SI3812DV , SI3851DV , SI3853DV , SI4410DY .

History: BUZ357 | FDMS86101DC

 

 
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