BSC010N04LSI Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC010N04LSI 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 37 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 48 nS
Cossⓘ - Capacitancia de salida: 1900 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00105 Ohm
Encapsulados: PG-TDSON-8
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BSC010N04LSI datasheet
bsc010n04lsi.pdf
BSC010N04LSI OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for synchronous rectification RDS(on),max 1.05 mW Integrated monolithic Schottky-like diode A ID 100 Very low on-resistance R DS(on) QOSS 83 nC 100% avalanche tested 87 nC QG(0V..10V) N-channel, channel Qualified according to JEDEC1) for target applications PG-TDSO
bsc010n04ls.pdf
BSC010N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for sychronous rectification RDS(on),max 1.0 mW Very low on-resistance R DS(on) ID 100 A 100% avalanche tested Qoss 84 nC Superior thermal resistance Qg(0V..10V) 95 nC N-channel, logic level PG-TDSON-8 FL Qualified according to JEDEC1) for target applications (enlarg
bsc010n04lst.pdf
BSC010N04LST MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM Power-MOSFET, 40 V 8 7 6 Features 5 Optimized for sychronous rectification 175 C rated 1 5 2 6 Very low on-resistance R DS(on) 7 3 4 8 100% avalanche tested Superior thermal resistance 4 N-channel, logic level 3 Qualified according to JEDEC1) for target applications 2
bsc010n04ls6.pdf
BSC010N04LS6 MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM 6 Power-Transistor, 40 V 8 7 6 Features 5 Optimized for synchronous application Very low on-resistance R DS(on) 1 5 2 6 100% avalanche tested 7 3 4 8 Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 2
Otros transistores... BSB056N10NN3G, BSB104N08NP3G, BSB165N15NZ3G, BSB280N15NZ3G, BSC009NE2LS, BSC009NE2LS5, BSC009NE2LS5I, BSC010N04LS, STP75NF75, BSC010NE2LSI, BSC011N03LSI, BSC014N03LS, BSC014N03MS, BSC014N04LS, BSC014N04LSI, BSC014N06NS, BSC014NE2LSI
History: FDB082N15A | BSC016N06NS | BSC020N03MS
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