BSC014NE2LSI Datasheet. Equivalente

 ..1. Size:699K  infineon
 bsc014ne2lsi.pdf

BSC014NE2LSI OptiMOSTM Power-MOSFET Product Summary Features VDS 25 V Optimized for high performance Buck converter RDS(on),max 1.4 mW Monolithic integrated Schottky like diode A ID 100 Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 25 nC 100% avalanche tested 39 nC QG(0V..10V) N-channel Qualified according to JEDEC1) for target applicatio

 7.1. Size:976K  infineon
 bsc014n06nssc.pdf

BSC014N06NSSC MOSFET PG-WSON-8-2 OptiMOSTM Power-Transistor, 60 V Features Double side cooled package-with lowest Junction-top thermal resistance tab 175 C rated Optimized for high performance SMPS, e.g. sync. rec. 5 6 100% avalanche tested 7 8 Superior thermal resistance 4 3 N-channel 2 1 Pb-free lead plating; RoHS compliant Halogen-free ac

 7.2. Size:511K  infineon
 bsc014n06ns.pdf

Type BSC014N06NS OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 1.45 mW Superior thermal resistance ID 100 A N-channel QOSS nC 100 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 89 Pb-free lead plating; RoHS compliant PG-

 7.3. Size:641K  infineon
 bsc014n04ls.pdf

BSC014N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for synchronous rectification RDS(on),max 1.4 mW Very low on-state resistance R DS(on) ID 100 A 100% avalanche tested Qoss 54 nC Superior thermal resistance Qg(0V..10V) 61 nC N-channel, logic level PG-TDSON-8 FL Qualified according to JEDEC1) for target applications (

 7.4. Size:598K  infineon
 bsc014n04lsi.pdf

BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for synchronous rectification RDS(on),max 1.45 mW Integrated monolithic Schottky-like diode A ID 100 Very low on-resistance R DS(on) QOSS 53 nC 100% avalanche tested 55 nC QG(0V..10V) N-channel, logic level PG-TDSON-8 FL Qualified according to JEDEC1) for target a

 7.5. Size:700K  infineon
 bsc014n03ls .pdf

& " & E $;B1= !#& ' $=;0@/? &@99-=y Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- 1 4 m D n) m x Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C G D ON Q ( 492??6= Q &@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q -EA6B @B D96B>2= B6C CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2

 7.6. Size:463K  infineon
 bsc014n03ls.pdf

BSC014N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 1.4 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel Logic level; Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

 7.7. Size:466K  infineon
 bsc014n03lsg.pdf

BSC014N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 1.4 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel Logic level; Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

 7.8. Size:540K  infineon
 bsc014n03msg.pdf

% ! % D %0 G D ON S 07DK >AI A@ D7E;EF3@57 0 D n) G S J57>>7@F 93F7 5 3D97 J BDA6G5F !* ( D n) 1) S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@E S .GB

 7.9. Size:194K  infineon
 bsc014n03ms.pdf

BSC014N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 1.4 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 1.75 GS 100% avalanche tested I 100 A D N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R prod