All MOSFET. BSC014NE2LSI Datasheet

 

BSC014NE2LSI Datasheet and Replacement


   Type Designator: BSC014NE2LSI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: PG-TDSON-8
 

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BSC014NE2LSI Datasheet (PDF)

 ..1. Size:699K  infineon
bsc014ne2lsi.pdf pdf_icon

BSC014NE2LSI

BSC014NE2LSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 1.4 mW Monolithic integrated Schottky like diodeA ID 100 Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 25 nC 100% avalanche tested39 nC QG(0V..10V) N-channel Qualified according to JEDEC1) for target applicatio

 7.1. Size:976K  infineon
bsc014n06nssc.pdf pdf_icon

BSC014NE2LSI

BSC014N06NSSCMOSFETPG-WSON-8-2OptiMOSTM Power-Transistor, 60 VFeatures Double side cooled package-with lowest Junction-top thermal resistancetab 175C rated Optimized for high performance SMPS, e.g. sync. rec.56 100% avalanche tested78 Superior thermal resistance43 N-channel21 Pb-free lead plating; RoHS compliant Halogen-free ac

 7.2. Size:511K  infineon
bsc014n06ns.pdf pdf_icon

BSC014NE2LSI

TypeBSC014N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 1.45 mW Superior thermal resistanceID 100 A N-channelQOSS nC 100 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 89 Pb-free lead plating; RoHS compliantPG-

 7.3. Size:641K  infineon
bsc014n04ls.pdf pdf_icon

BSC014NE2LSI

BSC014N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for synchronous rectificationRDS(on),max 1.4 mW Very low on-state resistance RDS(on)ID 100 A 100% avalanche testedQoss 54 nC Superior thermal resistanceQg(0V..10V) 61 nC N-channel, logic levelPG-TDSON-8 FL Qualified according to JEDEC1) for target applications(

Datasheet: BSC010N04LSI , BSC010NE2LSI , BSC011N03LSI , BSC014N03LS , BSC014N03MS , BSC014N04LS , BSC014N04LSI , BSC014N06NS , 2SK3568 , BSC016N03LS , BSC016N03MS , BSC016N06NS , BSC018NE2LSI , BSC019N02KS , BSC019N04LS , BSC020N03LS , BSC020N03MS .

History: NCE60NF160K | SM140R50CT1TL | BLP04N10-P | DHB16N06 | NTMFS4943N | IPT60R150G7 | AP60SL650AFI

Keywords - BSC014NE2LSI MOSFET datasheet

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