SFW9Z24 Todos los transistores

 

SFW9Z24 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SFW9Z24
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 49 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.7 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
   Paquete / Cubierta: TO263
 

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SFW9Z24 Datasheet (PDF)

 ..1. Size:281K  fairchild semi
 sfi9z24 sfw9z24.pdf pdf_icon

SFW9Z24

SFW/I9Z24Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -9.7 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Low RDS(ON) : 0.206 (Typ.)112331. Gate

 ..2. Size:507K  samsung
 sfw9z24.pdf pdf_icon

SFW9Z24

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = -9.7 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.206 (Typ.)112331. Gate 2. Drain 3. SourceAbsolut

 9.1. Size:279K  fairchild semi
 sfi9z14 sfw9z14.pdf pdf_icon

SFW9Z24

SFW/I9Z14Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -6.7 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Low RDS(ON) : 0.362 (Typ.)112331. Gate

 9.2. Size:286K  fairchild semi
 sfw9z34tm.pdf pdf_icon

SFW9Z24

SFW/I9Z34Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -18 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175oC Operating Temperature2 Lower Leakage Current : 10 A(Max.) @ VDS = -60V Low RDS(ON) : 0.106 (Typ.)112331. Gate 2. Drain

MOSTRAR MÁS

Otros transistores... SFW9614 , SFW9620 , SFW9624 , SFW9630 , SFW9634 , SFW9640 , SFW9644 , SFW9Z14 , 5N60 , SFW9Z34 , SI3443DVPBF , SI3812DV , SI3851DV , SI3853DV , SI4410DY , SI4435DY , SI4810DY .

History: SSW20N60S | SI4925BDY | SI4914DY | IRF543FI | MTE130N20J3 | WML13N80M3 | RQ3C150BC

 

 
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