All MOSFET. SFW9Z24 Datasheet

 

SFW9Z24 Datasheet and Replacement


   Type Designator: SFW9Z24
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO263
 

 SFW9Z24 substitution

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SFW9Z24 Datasheet (PDF)

 ..1. Size:281K  fairchild semi
sfi9z24 sfw9z24.pdf pdf_icon

SFW9Z24

SFW/I9Z24Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -9.7 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Low RDS(ON) : 0.206 (Typ.)112331. Gate

 ..2. Size:507K  samsung
sfw9z24.pdf pdf_icon

SFW9Z24

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = -9.7 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.206 (Typ.)112331. Gate 2. Drain 3. SourceAbsolut

 9.1. Size:279K  fairchild semi
sfi9z14 sfw9z14.pdf pdf_icon

SFW9Z24

SFW/I9Z14Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -6.7 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Low RDS(ON) : 0.362 (Typ.)112331. Gate

 9.2. Size:286K  fairchild semi
sfw9z34tm.pdf pdf_icon

SFW9Z24

SFW/I9Z34Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -18 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175oC Operating Temperature2 Lower Leakage Current : 10 A(Max.) @ VDS = -60V Low RDS(ON) : 0.106 (Typ.)112331. Gate 2. Drain

Datasheet: SFW9614 , SFW9620 , SFW9624 , SFW9630 , SFW9634 , SFW9640 , SFW9644 , SFW9Z14 , 5N60 , SFW9Z34 , SI3443DVPBF , SI3812DV , SI3851DV , SI3853DV , SI4410DY , SI4435DY , SI4810DY .

History: MCAC40N10YA-TP

Keywords - SFW9Z24 MOSFET datasheet

 SFW9Z24 cross reference
 SFW9Z24 equivalent finder
 SFW9Z24 lookup
 SFW9Z24 substitution
 SFW9Z24 replacement

 

 
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