SFW9Z34 Todos los transistores

 

SFW9Z34 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SFW9Z34

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 82 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 265 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm

Encapsulados: TO263

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SFW9Z34 datasheet

 ..1. Size:509K  samsung
 sfw9z34.pdf pdf_icon

SFW9Z34

Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = -18 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = -60V Low RDS(ON) 0.106 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute

 0.1. Size:286K  fairchild semi
 sfw9z34tm.pdf pdf_icon

SFW9Z34

SFW/I9Z34 Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = -18 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175oC Operating Temperature 2 Lower Leakage Current 10 A(Max.) @ VDS = -60V Low RDS(ON) 0.106 (Typ.) 1 1 2 3 3 1. Gate 2. Drain

 9.1. Size:281K  fairchild semi
 sfi9z24 sfw9z24.pdf pdf_icon

SFW9Z34

SFW/I9Z24 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -9.7 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK I2-PAK n 175oC Operating Temperature 2 n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Low RDS(ON) 0.206 (Typ.) 1 1 2 3 3 1. Gate

 9.2. Size:279K  fairchild semi
 sfi9z14 sfw9z14.pdf pdf_icon

SFW9Z34

SFW/I9Z14 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -6.7 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK I2-PAK n 175oC Operating Temperature 2 n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Low RDS(ON) 0.362 (Typ.) 1 1 2 3 3 1. Gate

MOSTRAR MÁS

Otros transistores... SFW9620 , SFW9624 , SFW9630 , SFW9634 , SFW9640 , SFW9644 , SFW9Z14 , SFW9Z24 , AO3401 , SI3443DVPBF , SI3812DV , SI3851DV , SI3853DV , SI4410DY , SI4435DY , SI4810DY , SI4812DY .

History: SGM2305A | HM1404D

 

 

 

 

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