Справочник MOSFET. SFW9Z34

 

SFW9Z34 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SFW9Z34
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 82 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 30 nC
   trⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 265 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm
   Тип корпуса: TO263

 Аналог (замена) для SFW9Z34

 

 

SFW9Z34 Datasheet (PDF)

 ..1. Size:509K  samsung
 sfw9z34.pdf

SFW9Z34 SFW9Z34

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -18 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.106 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute

 0.1. Size:286K  fairchild semi
 sfw9z34tm.pdf

SFW9Z34 SFW9Z34

SFW/I9Z34Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -18 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175oC Operating Temperature2 Lower Leakage Current : 10 A(Max.) @ VDS = -60V Low RDS(ON) : 0.106 (Typ.)112331. Gate 2. Drain

 9.1. Size:281K  fairchild semi
 sfi9z24 sfw9z24.pdf

SFW9Z34 SFW9Z34

SFW/I9Z24Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -9.7 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Low RDS(ON) : 0.206 (Typ.)112331. Gate

 9.2. Size:279K  fairchild semi
 sfi9z14 sfw9z14.pdf

SFW9Z34 SFW9Z34

SFW/I9Z14Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -6.7 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Low RDS(ON) : 0.362 (Typ.)112331. Gate

 9.3. Size:507K  samsung
 sfw9z24.pdf

SFW9Z34 SFW9Z34

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = -9.7 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.206 (Typ.)112331. Gate 2. Drain 3. SourceAbsolut

 9.4. Size:498K  samsung
 sfw9z14.pdf

SFW9Z34 SFW9Z34

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.7 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.362 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute

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