SFW9Z34 - аналоги, параметры транзистора - Справочник транзисторов

SFW9Z34 даташит

..1. Size:509K samsung
sfw9z34.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = -18 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = -60V Low RDS(ON) 0.106 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute

0.1. Size:286K fairchild semi
sfw9z34tm.pdf pdf_icon

SFW/I9Z34 Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = -18 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175oC Operating Temperature 2 Lower Leakage Current 10 A(Max.) @ VDS = -60V Low RDS(ON) 0.106 (Typ.) 1 1 2 3 3 1. Gate 2. Drain

9.1. Size:281K fairchild semi
sfi9z24 sfw9z24.pdf pdf_icon

SFW/I9Z24 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -9.7 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK I2-PAK n 175oC Operating Temperature 2 n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Low RDS(ON) 0.206 (Typ.) 1 1 2 3 3 1. Gate

9.2. Size:279K fairchild semi
sfi9z14 sfw9z14.pdf pdf_icon

SFW/I9Z14 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -6.7 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK I2-PAK n 175oC Operating Temperature 2 n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Low RDS(ON) 0.362 (Typ.) 1 1 2 3 3 1. Gate