BSC057N03LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC057N03LS
Código: 057N03LS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 VQgⓘ - Carga de la puerta: 11 nC
trⓘ - Tiempo de subida: 3.6 nS
Cossⓘ - Capacitancia de salida: 690 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
Paquete / Cubierta: PG-TDSON-8
Búsqueda de reemplazo de MOSFET BSC057N03LS
BSC057N03LS Datasheet (PDF)
bsc057n03ls.pdf
BSC057N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5.7 mW Optimized technology for DC/DC convertersID 71 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
bsc057n03ls .pdf
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bsc057n03lsg.pdf
BSC057N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5.7 mW Optimized technology for DC/DC convertersID 71 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
bsc057n03ms.pdf
BSC057N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 7.2 100% avalanche testedID 71 A N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM
bsc057n03msg5.pdf
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bsc057n03msg.pdf
BSC057N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 7.2 100% avalanche testedID 71 A N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
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