BSC057N03LS MOSFET. Datasheet pdf. Equivalent
Type Designator: BSC057N03LS
Marking Code: 057N03LS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 3.6 nS
Cossⓘ - Output Capacitance: 690 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
Package: PG-TDSON-8
BSC057N03LS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSC057N03LS Datasheet (PDF)
bsc057n03ls.pdf
BSC057N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5.7 mW Optimized technology for DC/DC convertersID 71 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
bsc057n03ls .pdf
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bsc057n03lsg.pdf
BSC057N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5.7 mW Optimized technology for DC/DC convertersID 71 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
bsc057n03ms.pdf
BSC057N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 7.2 100% avalanche testedID 71 A N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM
bsc057n03msg5.pdf
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bsc057n03msg.pdf
BSC057N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 7.2 100% avalanche testedID 71 A N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM
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