BSC150N03LD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC150N03LD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.2 nS
Cossⓘ - Capacitancia de salida: 350 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Paquete / Cubierta: PG-TDSON-8
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BSC150N03LD Datasheet (PDF)
bsc150n03ld.pdf

BSC150N03LD GOptiMOS3 Power-TransistorsProduct SummaryFeaturesV 30 VDS Dual N-channel, logic levelR 15mDS(on),max Fast switching MOSFETs for SMPSI 20 ADPG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on
bsc150n03ldg.pdf

BSC150N03LD GOptiMOS3 Power-TransistorsProduct SummaryFeaturesV 30 VDS Dual N-channel, logic levelR 15mDS(on),max Fast switching MOSFETs for SMPSI 20 ADPG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on
bsc155n06nd.pdf

BSC155N06NDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 60 V8 17Features 26354 Dual N-channel,Normal Level Fast switching MOSFETs 175C operating temperature Green product (RoHS compliant)182 7 100% Avalanche tested3 654 Optimized technology for drives applications Halogen-free according to IEC61249-2-21 Superior thermal resis
Otros transistores... BSC0924NDI , BSC0925ND , BSC097N06NS , BSC098N10NS5 , BSC100N03MS , BSC117N08NS5 , BSC120N03LS , BSC120N03MS , 20N60 , BSC252N10NSF , BSC500N20NS3G , BSD214SN , BSD235C , BSD235N , BSD316SN , BSD816SN , BSD840N .
History: IRFB4310ZGPBF | IRFB3307ZPBF | HM16N02D
History: IRFB4310ZGPBF | IRFB3307ZPBF | HM16N02D



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