BSC150N03LD Todos los transistores

 ..1. Size:317K  infineon
 bsc150n03ld.pdf

BSC150N03LD G OptiMOS 3 Power-Transistors Product Summary Features V 30 V DS Dual N-channel, logic level R 15 m DS(on),max Fast switching MOSFETs for SMPS I 20 A D PG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on

 ..2. Size:589K  infineon
 bsc150n03ld .pdf

% ! D # A0

 0.1. Size:319K  infineon
 bsc150n03ldg.pdf

BSC150N03LD G OptiMOS 3 Power-Transistors Product Summary Features V 30 V DS Dual N-channel, logic level R 15 m DS(on),max Fast switching MOSFETs for SMPS I 20 A D PG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on

 9.1. Size:1163K  infineon
 bsc155n06nd.pdf

BSC155N06ND MOSFET PG-TDSON-8-4 OptiMOSTM-T2 Power Transistor, 60 V 8 1 7 Features 2 6 3 5 4 Dual N-channel,Normal Level Fast switching MOSFETs 175 C operating temperature Green product (RoHS compliant) 1 8 2 7 100% Avalanche tested 3 6 5 4 Optimized technology for drives applications Halogen-free according to IEC61249-2-21 Superior thermal resis

 9.2. Size:665K  infineon
 bsc152n10nsf8.pdf

% ! !% D # A0 D Q ' 381>>5?B=1

 9.3. Size:666K  infineon
 bsc159n10lsf9 bsc159n10lsfg.pdf

& " & E $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 1 D R ( 492??6= =@8 4 =6G6= 1 m D n) m x R /6CJ =@H 82E6 492C86 I AC@5F4E ) ' D n) D R &@H @? C6D DE2?46 D n) G D ON R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @"- 4@>A= 2?E "2=@86? C66 1) R + F2= 7 65 244@C5 ?8 E@ $ 7@C E2C86E 2AA= 42E @? R #562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?49C@?@FD C64E 7 42