BSC150N03LD Datasheet and Replacement
Type Designator: BSC150N03LD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.2 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: PG-TDSON-8
BSC150N03LD substitution
BSC150N03LD Datasheet (PDF)
bsc150n03ld.pdf

BSC150N03LD GOptiMOS3 Power-TransistorsProduct SummaryFeaturesV 30 VDS Dual N-channel, logic levelR 15mDS(on),max Fast switching MOSFETs for SMPSI 20 ADPG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on
bsc150n03ldg.pdf

BSC150N03LD GOptiMOS3 Power-TransistorsProduct SummaryFeaturesV 30 VDS Dual N-channel, logic levelR 15mDS(on),max Fast switching MOSFETs for SMPSI 20 ADPG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on
bsc155n06nd.pdf

BSC155N06NDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 60 V8 17Features 26354 Dual N-channel,Normal Level Fast switching MOSFETs 175C operating temperature Green product (RoHS compliant)182 7 100% Avalanche tested3 654 Optimized technology for drives applications Halogen-free according to IEC61249-2-21 Superior thermal resis
Datasheet: BSC0924NDI , BSC0925ND , BSC097N06NS , BSC098N10NS5 , BSC100N03MS , BSC117N08NS5 , BSC120N03LS , BSC120N03MS , IRF840 , BSC252N10NSF , BSC500N20NS3G , BSD214SN , BSD235C , BSD235N , BSD316SN , BSD816SN , BSD840N .
History: SIHFD214 | LSE65R570GT | 2SK2662 | TPCA8027-H | IRFSZ24 | SSF2610E | TPC8133
Keywords - BSC150N03LD MOSFET datasheet
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History: SIHFD214 | LSE65R570GT | 2SK2662 | TPCA8027-H | IRFSZ24 | SSF2610E | TPC8133



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