BSL302SN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BSL302SN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 2.8 nS
   Cossⓘ - Capacitancia de salida: 202 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SOT-457

Búsqueda de reemplazo de MOSFET BSL302SN

BSL302SN Datasheet (PDF)

..1. Size:146K infineon
bsl302sn.pdf

BSL302SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 25mDS(on),max GS Enhancement modeV =4.5 V 38GS Logic level (4.5V rated)I 7.1 AD Avalanche rated dv /dt ratedPG-TSOP-6 Pb-free lead plating; RoHS compliant65 Qualified according to AEC Q1014123Type Package Tape and Reel Informa

9.1. Size:358K infineon
bsl308pe.pdf

BSL308PEOptiMOS P3 Small-Signal-TransistorProduct Summary FeaturesVDS -30 V Dual P-channelRDS(on),max VGS=-10 V 80 mW Enhancement modeVGS=-4.5 V 130 Logic level (4.5V rated)ID -2.0 A ESD protectedPG-TSOP-6 Qualified according to AEC Q1016 5 4 100% Lead-free; RoHS compliant Halogen free according to IEC61249-2-211 2 3 Ty

9.2. Size:418K infineon
bsl306n.pdf

BSL306N$=@6"$'F ':.99 '64;.9 (>.;?6?@%>EFeatures 0 VDST H5@ ) 7

9.3. Size:435K infineon
bsl305spe.pdf

MosfetMetal Oxide Semiconductor Field Effect TransistorOptiMOS Power-Transistor, -30VBSL305SPEData SheetRev. 2.0FinalIndustrial & MultimarketBSL305SPEOptiMOS-P 3 Small-Signal-TransistorProduct SummaryFeaturesVDS -30 V P-channelRDS(on),max VGS=-10 V 45m Enhancement modeVGS=-4.5 V 80 Logic level (4.5V rated)ID -5.3 A ESD protected

9.4. Size:406K infineon
bsl308c.pdf

BSL308COptiMOS P3 + Optimos 2 Small Signal TransistorProduct Summary Features Complementary P + N channel P N Enhancement modeVDS -30 30 V Logic level (4.5V rated)RDS(on),max VGS=10 V 80 57 mW Avalanche ratedVGS=4.5 V 130 93 ID -2.0 2.3 A Qualified according to AEC Q101 100% Lead-free; RoHS compliantPG-TSOP-6 Halogen free according

9.5. Size:408K infineon
bsl303spe.pdf

MosfetMetal Oxide Semiconductor Field Effect TransistorOptiMOS Power-Transistor, -30VBSL303SPEData SheetRev. 2.0FinalIndustrial & MultimarketBSL303SPEOptiMOS-P 3 Small-Signal-TransistorProduct SummaryFeaturesVDS -30 V P-channelRDS(on),max VGS=-10 V 33m Enhancement modeVGS=-4.5 V 52 Logic level (4.5V rated)ID -6.3 A ESD protected

9.6. Size:107K infineon
bsl307sp.pdf

Rev 1.2BSL307SPOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -30 V P-ChannelRDS(on) 43 m Enhancement modeID -5.5 A Logic LevelPG-TSOP-6-1 150C operating temperature Avalanche rated dv/dt rated435261Drainpin 1,2,5,6Gatepin 3Type Package Tape and reel MarkingSourceBSL307SP PG-TSOP-6-1 L63

9.7. Size:2412K cn vbsemi
bsl307sp.pdf

BSL307SPwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Ch

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