BSL302SN Datasheet and Replacement
Type Designator: BSL302SN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.8 nS
Cossⓘ - Output Capacitance: 202 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOT-457
BSL302SN substitution
BSL302SN Datasheet (PDF)
bsl302sn.pdf

BSL302SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 25mDS(on),max GS Enhancement modeV =4.5 V 38GS Logic level (4.5V rated)I 7.1 AD Avalanche rated dv /dt ratedPG-TSOP-6 Pb-free lead plating; RoHS compliant65 Qualified according to AEC Q1014123Type Package Tape and Reel Informa
bsl308pe.pdf

BSL308PEOptiMOS P3 Small-Signal-TransistorProduct Summary FeaturesVDS -30 V Dual P-channelRDS(on),max VGS=-10 V 80 mW Enhancement modeVGS=-4.5 V 130 Logic level (4.5V rated)ID -2.0 A ESD protectedPG-TSOP-6 Qualified according to AEC Q1016 5 4 100% Lead-free; RoHS compliant Halogen free according to IEC61249-2-211 2 3 Ty
bsl305spe.pdf

MosfetMetal Oxide Semiconductor Field Effect TransistorOptiMOS Power-Transistor, -30VBSL305SPEData SheetRev. 2.0FinalIndustrial & MultimarketBSL305SPEOptiMOS-P 3 Small-Signal-TransistorProduct SummaryFeaturesVDS -30 V P-channelRDS(on),max VGS=-10 V 45m Enhancement modeVGS=-4.5 V 80 Logic level (4.5V rated)ID -5.3 A ESD protected
Datasheet: BSH111BK , BSH112 , BSH205G2 , BSL202SN , BSL205N , BSL207N , BSL214N , BSL215C , 7N65 , BSL303SPE , BSL305SPE , BSL306N , BSL308C , BSL316C , BSL606SN , BSL802SN , BSL806N .
History: BRCS30N02DP | 6N60KL-TMS4-T | CS5N70F | SLU60R380S2 | APT8052BLL | PMPB15XN | FDS2070N3
Keywords - BSL302SN MOSFET datasheet
BSL302SN cross reference
BSL302SN equivalent finder
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History: BRCS30N02DP | 6N60KL-TMS4-T | CS5N70F | SLU60R380S2 | APT8052BLL | PMPB15XN | FDS2070N3



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