BSP125 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSP125
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 0.12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 14.4 nS
Cossⓘ - Capacitancia de salida: 8.2 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 45 Ohm
Encapsulados: SOT-223
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BSP125 datasheet
..1. Size:175K siemens
bsp125.pdf 
BSP 125 SIPMOS Small-Signal Transistor N channel Enhancement mode VGS(th) = 1.5 ...2.5 V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package Marking BSP 125 600 V 0.12 A 45 SOT-223 BSP 125 Type Ordering Code Tape and Reel Information BSP 125 Q62702-S654 E6327 BSP 125 Q67000-S284 E6433 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS
..2. Size:337K infineon
bsp125.pdf
Rev. 2.1 BSP125 SIPMOS Power-Transistor Product Summary Feature VDS 600 V N-Channel RDS(on) 45 Enhancement mode ID 0.12 A Logic Level PG-SOT223 dv/dt rated Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Marking Packaging Type Package RoHS compliant Tape and Reel Information BSP125 PG-SOT223 Yes L6433 4000 pcs/reel BSP125 No
9.1. Size:50K philips
bsp128.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BSP128 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP128 D-MOS transistor FEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS dra
9.2. Size:75K philips
bsp126.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP126 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 250 V vertical D
9.3. Size:50K philips
bsp122.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BSP122 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP122 D-MOS transistor FEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS dra
9.4. Size:65K philips
bsp126 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP126 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 250 V vertical D
9.5. Size:65K philips
bsp120.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BSP120 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP120 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max. 200 V vertical D
9.6. Size:50K philips
bsp127.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BSP127 N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP127 D-MOS transistor FEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX. UNIT etc. VDS dra
9.7. Size:75K philips
bsp121.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BSP121 N-channel enhancement mode vertical D-MOS transistor 1998 Apr 01 Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP121 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain source vo
9.8. Size:64K philips
bsp121 cnv 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BSP121 N-channel enhancement mode vertical D-MOS transistor 1998 Apr 01 Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSP121 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain source vo
9.9. Size:182K nxp
bsp126.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
9.10. Size:170K nxp
bsp122.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
9.11. Size:370K infineon
bsp123.pdf
Rev. 1.5 BSP123 SIPMOS Small-Signal-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 6 Enhancement mode ID 0.37 A Logic Level PG-SOT223 dv/dt rated Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Type Package Tape and Reel Information Marking Packaging PG-SOT223 Non dry BSP123 L6433 4000 pcs/reel BSP123 BSP123
9.12. Size:410K infineon
bsp129.pdf
BSP129 SIPMOS Small-Signal-Transistor Product Summary Features VDS 240 V N-channel RDS(on),max 6 W Depletion mode IDSS,min 0.05 A dv /dt rated Available with V indicator on reel GS(th) Pb-free lead plating; RoHS compliant PG-SOT223 Qualified according to AEC Q101 Type Package Tape and Reel Marking Packaging Type Package Tape and Reel Marking Pac
9.13. Size:1687K cn vbsemi
bsp122.pdf
BSP122 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Available in tape and reel VDS (V) 200 Dynamic dV/dt rating RDS(on) ( )VGS = 10 V 1.2 Repetitive avalanche rated Qg (Max.) (nC) 8.2 Fast switching Qgs (nC) 1.8 Ease of paralleling Available Qgd (nC) 4.5 Simple drive requirements Configuration Single D SOT-223 D G S D G S
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