BSS138L99Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSS138L99Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.36 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 13 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm
Búsqueda de reemplazo de BSS138L99Z MOSFET
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BSS138L99Z datasheet
bss138lt1.pdf
BSS138LT1 Preferred Device Power MOSFET 200 mA, 50 V N-Channel SOT-23 Typical applications are DC-DC converters, power management in http //onsemi.com portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 200 mA, 50 V Features RDS(on) = 3.5 W Low Threshold Voltage (VGS(th) 0.5 V-1.5 V) Makes it Ideal for N-Channel L
bss138lt3 bss138lt3g.pdf
BSS138LT1 Power MOSFET 200 mA, 50 V N-Channel SOT-23 Typical applications are DC-DC converters, power management in http //onsemi.com portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 200 mA, 50 V Features RDS(on) = 3.5 W Low Threshold Voltage (VGS(th) 0.5 V-1.5 V) Makes it Ideal for N-Channel Low Voltage Applica
bss138l bvss138l.pdf
BSS138L, BVSS138L Power MOSFET 200 mA, 50 V N-Channel SOT-23 Typical applications are DC-DC converters, power management in www.onsemi.com portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 200 mA, 50 V Features RDS(on) = 3.5 W Low Threshold Voltage (VGS(th) 0.5 V-1.5 V) Makes it Ideal for N-Channel Low Voltage Ap
bss138lt1.pdf
FM120-M WILLAS THRU BSS 8LT1 200 mAmps, 50 Volts Power MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optim
Otros transistores... BSS123TA , BSS123TC , BSS126 , BSS127 , BSS127S , BSS127SSN , BSS131 , BSS138D87Z , EMB04N03H , BSS138AKA , BSS138BKS , BSS138-G , BSS138LT1G , BSS138LT3 , BSS138LT3G , BSS138N , BSS138TA .
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