BSS138L99Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSS138L99Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.36 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 13 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm
Paquete / Cubierta: SOT-23 SOT-346
- Selección de transistores por parámetros
BSS138L99Z Datasheet (PDF)
bss138lt1.pdf

BSS138LT1Preferred DevicePower MOSFET200 mA, 50 VN-Channel SOT-23Typical applications are DC-DC converters, power management inhttp://onsemi.comportable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones.200 mA, 50 VFeaturesRDS(on) = 3.5 W Low Threshold Voltage (VGS(th): 0.5 V-1.5 V) Makes it Ideal forN-ChannelL
bss138lt3 bss138lt3g.pdf

BSS138LT1Power MOSFET200 mA, 50 VN-Channel SOT-23Typical applications are DC-DC converters, power management inhttp://onsemi.comportable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones.200 mA, 50 VFeaturesRDS(on) = 3.5 W Low Threshold Voltage (VGS(th): 0.5 V-1.5 V) Makes it Ideal forN-ChannelLow Voltage Applica
bss138l bvss138l.pdf

BSS138L, BVSS138LPower MOSFET200 mA, 50 VN-Channel SOT-23Typical applications are DC-DC converters, power management inwww.onsemi.comportable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones.200 mA, 50 VFeaturesRDS(on) = 3.5 W Low Threshold Voltage (VGS(th): 0.5 V-1.5 V) Makes it Ideal forN-ChannelLow Voltage Ap
bss138lt1.pdf

FM120-M WILLASTHRUBSS 8LT1200 mAmps, 50 VoltsPower MOSFETFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optim
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2N7089 | PMN50UPE | 2SJ362 | KUK7606-55A
History: 2N7089 | PMN50UPE | 2SJ362 | KUK7606-55A



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