BSS139 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSS139
Código: STs
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.36 W
Voltaje máximo drenador - fuente |Vds|: 250 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 0.1 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 2.3 nC
Tiempo de subida (tr): 5.4 nS
Conductancia de drenaje-sustrato (Cd): 6.7 pF
Resistencia entre drenaje y fuente RDS(on): 14 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET BSS139
BSS139 Datasheet (PDF)
bss139.pdf
BSS139SIPMOS Small-Signal-TransistorProduct SummaryFeaturesV 250 VDS N-channelR 30DS(on),max Depletion modeI 0.03 ADSS,min dv /dt rated Available with V indicator on reelGS(th) Pb-free lead-plating; RoHS compliantPG-SOT-23 Halogen free according to IEC61249-2-21 Qualified according to AEC Q101Type Package Tape and Reel Information
bss139.pdf
BSS139 Rev.A Aug.-2017 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features SOT-23 1500V Low RDS(on),rugged and reliable, compact industry standard SOT-23 surface mount package.ESD protected up to 1500V / A
lbss139lt1g lbss139lt3g.pdf
LBSS139LT1GS-LBSS139LT1GPower MOSFET200 mAmps, 50 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.Low threshold voltage (VGS(th):
lbss139dw1t1g lbss139dw1t3g.pdf
LBSS139DW1T1GS-LBSS139DW1T1GPower MOSFET200 mAmps, 50 Volts NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low threshold voltage (VGS(t
lbss139lt1g.pdf
LBSS139LT1Gwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG
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