All MOSFET. BSS139 Datasheet

 

BSS139 Datasheet and Replacement


   Type Designator: BSS139
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5.4 nS
   Cossⓘ - Output Capacitance: 6.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
   Package: SOT-23
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BSS139 Datasheet (PDF)

 ..1. Size:679K  infineon
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BSS139

BSS139SIPMOS Small-Signal-TransistorProduct SummaryFeaturesV 250 VDS N-channelR 30DS(on),max Depletion modeI 0.03 ADSS,min dv /dt rated Available with V indicator on reelGS(th) Pb-free lead-plating; RoHS compliantPG-SOT-23 Halogen free according to IEC61249-2-21 Qualified according to AEC Q101Type Package Tape and Reel Information

 ..2. Size:1524K  blue-rocket-elect
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BSS139

BSS139 Rev.A Aug.-2017 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features SOT-23 1500V Low RDS(on),rugged and reliable, compact industry standard SOT-23 surface mount package.ESD protected up to 1500V / A

 0.1. Size:1088K  lrc
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BSS139

LBSS139LT1GS-LBSS139LT1GPower MOSFET200 mAmps, 50 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.Low threshold voltage (VGS(th):

 0.2. Size:1057K  lrc
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BSS139

LBSS139DW1T1GS-LBSS139DW1T1GPower MOSFET200 mAmps, 50 Volts NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low threshold voltage (VGS(t

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History: LSF65R570GT | CSD16342Q5A

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